2009
DOI: 10.1088/1757-899x/6/1/012017
|View full text |Cite
|
Sign up to set email alerts
|

Sol-gel derived precursors to Group 14 semiconductor nanocrystals – Convenient materials for enabling nanocrystal-based applications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2011
2011
2018
2018

Publication Types

Select...
3
1

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(2 citation statements)
references
References 27 publications
0
2
0
Order By: Relevance
“…Using the sol-gel method, various NMs become available in mass-production, including group 14 semiconductor nanocrystals [54], TiO 2 NPs from a different precursor [55] with various morphologies [56], and different dopants [57,58] 5 Sol-gel methods [60], LiFePO 4 NPs [61] as a cathode material, XCuZn ferrite NPs (where X = Ni [62] or Mg [63]), Fe 2 O 3 /Al nanocomposites [64].…”
Section: Sol-gel Methodsmentioning
confidence: 99%
“…Using the sol-gel method, various NMs become available in mass-production, including group 14 semiconductor nanocrystals [54], TiO 2 NPs from a different precursor [55] with various morphologies [56], and different dopants [57,58] 5 Sol-gel methods [60], LiFePO 4 NPs [61] as a cathode material, XCuZn ferrite NPs (where X = Ni [62] or Mg [63]), Fe 2 O 3 /Al nanocomposites [64].…”
Section: Sol-gel Methodsmentioning
confidence: 99%
“…SiC QDs may be fabricated by embedding SiC particles in Si or SiO 2 matrix 16 or by use of sol-gel precursors. 17 Nevertheless, electrochemical etching of bulk SiC is the most widely used method where porous layers form during etching and these layers are broken down in an ultrasonic bath or by milling, and finally SiC QDs are produced with sizes smaller than 10 nm. 18 Cubic SiC may be effectively treated by electroless wet chemical etching in a mixture of hydrofluoric acid (HF) and nitric acid (HNO 3 ) at elevated temperature.…”
Section: Introductionmentioning
confidence: 99%