Sol gel deposition of pure and antimony doped tin dioxide thin films by non alkoxide precursors

Senguttuvan, T. D.; Malhotra, L.K.

doi:10.1016/s0040-6090(96)08921-3

Cited by 72 publications

(38 citation statements)

References 26 publications

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“…It is well described in literature that electrical conductivity of films increases significantly without losing its optical transparency if a small amount of suitable [11][12][13] dopant is incorporated. On the contrary, addition of large amount of dopant diminishes the conductivity and crystallinity of the films [14,15] for a number of factors such as formation of mixed phases of host and dopant oxides, creation of different types of defect centers, generation of amorphous and crystalline states of the oxides, etc.…”

Section: Introductionmentioning

confidence: 99%

“…On the contrary, addition of large amount of dopant diminishes the conductivity and crystallinity of the films [14,15] for a number of factors such as formation of mixed phases of host and dopant oxides, creation of different types of defect centers, generation of amorphous and crystalline states of the oxides, etc. Various film deposition techniques have been used to develop Sb doped SnO 2 , but the sol-gel processing exhibits good uniformity and better controlled composition [11,16,17] for thin film deposition. The purpose of the present work is three folds.…”

Section: Introductionmentioning

confidence: 99%

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Opto-Electrical Study of Sol-Gel Derived Antimony Doped Tin Oxide Films on Glass

De¹

2015

Transactions on Electrical and Electronic Materials

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Optical and electrical properties were studied for Antimony doped tin oxide thin films from precursors containing 10, 30, 50, and 70 atom% of Sb deposited on bare sodalime silica, barrier layer coated sodalime silica, and pure silica glass substrates by sol-gel spinning technique. The direct band gaps were found to vary from 3.13~4.12 eV when measured in the hv range of 2.5~5.0 eV, and varied from 4.22~5.08 eV when measured in the range of 4.0~7.0 eV. Indirect band gap values were in the range of 2.35~3.11 eV. Blue shift of band gap with respect to bulk band gap and Moss-Burstein shift were observed. Physical thickness of the films decreased with the increase in % Sb. Resistivity of the films deposited on SLS substrate was in the order of 10 -2 ohm cm. Sheet resistance of the films deposited on barrier layer coated soda lime silica glass substrate was found to be relatively less.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Opto-Electrical Study of Sol-Gel Derived Antimony Doped Tin Oxide Films on Glass

De¹

2015

Transactions on Electrical and Electronic Materials

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“…Our Sb-doped tin oxide (ATO) thin films have been prepared by using spin coating, with a non-alkoxide sol-gel derived stock solution. A non-alkoxide precursors incorporated stock solution is comparatively cheap and convenient in handling and usage during the sol-gel processing and film deposition, due to the environmental insensitivity of non-alkoxide precursors [21]. Finally, we investigate the crystallinity, microstructure, electrical properties and optical properties of ATO thin films in detail.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Sol-Gel Derived Antimony-doped Tin Oxide Thin Films for Transparent Conductive Oxide Application

Woo¹,

Koo²,

Chan³

et al. 2012

Transactions on Electrical and Electronic Materials

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Antimony doped tin oxide (ATO) thin films on glass substrate were prepared by the chemical solution deposition (CSD) method, using sol-gel solution synthesized by non-alkoxide precursors and the sol-gel route. The crystallinity and electrical properties of ATO thin films were investigated as a function of the annealing condition (both annealing environments and temperatures), and antimony (Sb) doping concentration. Electrical resistivity, carrier concentration, Hall mobility and optical transmittance of ATO thin films were improved by Sb doping up to 5~8 mol% and annealing in a low vacuum atmosphere, compared to the undoped tin oxide counterpart. 5 mol% Sb doped ATO film annealed at 550℃ in a low vacuum atmosphere showed the highest electrical properties, with electrical resistivity of about 8~10 × 10 -3 Ω·cm, and optical transmittance of ~85% in the visible range. Our research demonstrates the feasibility of low-cost solution-processed transparent conductive oxide thin films, by controlling the appropriate doping concentration and annealing conditions.

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“…Transparent conducting films are materials of great technological importance because they are necessary in making flat-panel displays or solar cells. Regarding the sustainable production of such films with a required level of conductance, deposition methods based on nano-scale particles [1][2][3][4][5] have been a focus of intense interest.…”

Section: Introductionmentioning

confidence: 99%

Conductivity Percolation on a Cubic Lattice with Core-Shell Particles

et al. 2011

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Particles made by coating an insulating core with a thin layer (shell) of conducting materials, called core-shell particles, were recently proposed to realize materials with particular nano-scale structures. Such structures work as a ''porous medium'' of electric current, and their modified characteristics may be useful to improve some materials, such as transparent conducting films. We have already reported 2D simulation of such a conducting film with core-shell particles.In this report, the basic feasibility of this idea is tested within the framework of the percolation model and the random register network model. The observed critical behavior and critical exponents of conductivity are also discussed, for the first time for 3D situations with core-shell particles.

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Sol gel deposition of pure and antimony doped tin dioxide thin films by non alkoxide precursors

Cited by 72 publications

References 26 publications

Opto-Electrical Study of Sol-Gel Derived Antimony Doped Tin Oxide Films on Glass

Opto-Electrical Study of Sol-Gel Derived Antimony Doped Tin Oxide Films on Glass

Characterization of Sol-Gel Derived Antimony-doped Tin Oxide Thin Films for Transparent Conductive Oxide Application

Conductivity Percolation on a Cubic Lattice with Core-Shell Particles

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