SOI Pressure Sensors Based on Laser Recrystallized Polysilicon

Voronin, V. A.; Maryamova, I. I.; Druzhinin, Anatoly; Lavitska, E.; Pankov, Y. M.

doi:10.1007/978-94-011-0109-7_25

Cited by 7 publications

(7 citation statements)

References 4 publications

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“…У працях [15][16][17] авторами виявлено особливості структурних, магнітних та мікромеханічних властивостей ниткоподібних кристалів та не до кінця з'ясовано їх фізичну природу. Тому, метою даної роботи було, на основі вивчення результатів скануючої електронної мікроскопії та енергетичного спектру рентгенівського випромінювання, з'ясувати особливості структури НК Si 1-x Ge x та її вплив на їх магнітні властивості.…”

Section: вступunclassified

“…Ниткоподібні кристали Si-Ge вирощувалися методом хімічних транспортних реакцій у закритій бромідній системі з використанням домішок-ініціаторів росту (Pt, Au) та легуючої домішки (B) [15]. Вміст германію в твердому розчині Si-Ge контролювався методом мікрозондового аналізу і становив х = 0,03.…”

Section: експериментальні результати та їх обговоренняunclassified

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Structure and magnetic properties of Si0.97Ge0.03 whiskers

Pavlovskyy

Luka

Ostrovskyy

et al. 2018

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By the method of chemical transport reactions in the closed halogen system Si-Au-Pt-B-Br, whiskers Si<sub>1-x</sub>Ge<sub>x</sub> x = 0.01-0.08 of transverse dimensions 0.1-100 μm were grown. Structural and magnetic properties of the obtained crystals are investigated. The method of scanning electron microscopy showeds that on the surface of needle-like crystals, with transverse dimensions of 50-80 microns, a porous shell with a thickness of 50-60 nm is present. From the analysis of the energy spectra of X-rays, it was found that the surface shell contains significant concentration atoms of oxygen and of carbon. In turn, oxygen and carbon peaks were not detected on the inner layers of samples. It has been established that the chemical etching of the surface layer of crystals leads to the improvement of their structural and magnetic properties.

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Section: вступunclassified

Section: експериментальні результати та їх обговоренняunclassified

Structure and magnetic properties of Si0.97Ge0.03 whiskers

Pavlovskyy

Luka

Ostrovskyy

et al. 2018

PCSS

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show abstract

“…8 The loaded batch consisted of silicon as a material being grown, gold used as a growth initiator, boron as a dopant and bromine used as a transport agent. The temperatures of evaporation and crystallization zones were 1000 C and 700-800 C, respectively.…”

Section: Experimental Conditionsmentioning

confidence: 99%

Magnetic Susceptibility of Doped Si Nanowhiskers

Druzhinin¹,

Ostrovskii²,

Khoverko³

et al. 2012

j nanosci nanotechnol

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The present paper deals with studies of magnetic properties of Si(B) whiskers with large boron impurity concentration of up to 1-5% in the range of magnetic fields (0.3-4.0) kOe and temperatures of 4.2-300 K. In particular, magnetic susceptibility of whiskers has been investigated. The results obtained in the temperature range of 77-300 K have shown that magnetic susceptibility of whiskers substantially differs from that of bulk Si, which is revealed in the two significant peculiarities: (1) a substantial paramagnetic contribution into whisker magnetization and magnetic susceptibility; (2) a non-linear dependency of magnetization on magnetic field intensity. These facts indicate an existence of magnetic ordering in whiskers. The observed magnetization hysteresis at 4.2 K confirms the above supposition. Possible reasons of the observed effects have been discussed.

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“…4 íàâåäåíî îäåðaeàí³ åêñïåðèìåíòà-ëüíî çàëåaeíîñò³ â³äíîñíî¿ çì³íè îïîðó øàð³â ïîë³êðåìí³þ â³ä äåôîðìàö³¿ äëÿ ð³çíèõ êîíöåí-òðàö³é íîñ³¿â çàðÿäó äî ³ ï³ñëÿ ëàçåðíî¿ ðåêðèñ-òàë³çàö³¿. Ðåçóëüòàòè âèì³ðþâàííÿ êîåô³ö³ºíòó òåíçî÷óòëèâîñò³ òà éîãî òåìïåðàòóðíî¿ çàëåae-íîñò³ äëÿ øàð³â ïîë³êðåìí³þ çâåäåí³ ó òàáëè-öþ 1 [8]. .…”

Section: òåíçîðåçèñòèâí³ õàðàêòåðèñòèêè øàð³â ïîë³-Si íà ³çîëÿòîð³unclassified

“…Îñíîâó ÷óò-ëèâîãî åëåìåíòó ñåíñîðà ñòàíîâèòü ìîíîêðèñ-òàë³÷íà ï³äêëàäêà (7) êðåìí³þ ð-òèïó ïðîâ³äíî-ñò³ (ÊÄÁ-80). Íåðóõîìèé åëåêòðîä óòâîðåíèé çàõîâàíîþ îáëàñòþ ñèëüíîëåãîâàíîãî êðåìí³þ n + -òèïó (8). Ìåìáðàíà, ùî ìàº êðóãëó ôîðìó, ñêëàäàºòüñÿ ç øàðó ñèëüíîëåãîâàíîãî n + -ïî-ë³êðåìí³þ (2) ³ çàõèñíîãî øàðó ôîñôîðíî-ñè-ë³êàòíîãî ñêëà (1).…”

Section: ì³êðîåëåêòðîííèé ºìí³ñíèé ñåíñîð òèñêóunclassified

Physical Sensors Based on Silicon- On- Insulator Structures With Recrystallized Polysilicon Layer

Druzhinin¹,

Maryamova²,

Kogut³

et al. 2008

SEMST

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Àíîòàö³ÿ. Ïðåäñòàâëåíî ðåçóëüòàòè äîñë³äaeåíü ç³ ñòâîðåííÿ ì³êðîåëåêòðîííèõ ñåíñîð³â ìåõàí³÷íèõ ³ òåïëîâèõ âåëè÷èí íà îñíîâ³ ñòðóêòóð "êðåìí³é íà ³çîëÿòîð³" (ÊÍ²-ñòðóêòóð) ç ðåêðèñòàë³çîâàíèõ ëàçåðîì øàðîì ïîë³êðåìí³þ. Îïèñàíî ðîçðîáëåíó òåõíîëîã³þ ì³êðîçîí-íî¿ ëàçåðíî¿ ðåêðèñòàë³çàö³¿ ïîë³-Si øàð³â.Íà îñíîâ³ ïðîâåäåíèõ äîñë³äaeåíü òåðìîðåçèñòèâíèõ õàðàêòåðèñòèê øàð³â ïîë³-Si ç ð³-çíîþ êîíöåíòðàö³ºþ íîñ³¿â çàðÿäó ðîçðîáëåíî ì³êðîåëåêòðîíí³ ñåíñîðè òåìïåðàòóðè äëÿ ð³çíèõ òåìïåðàòóðíèõ ä³àïàçîí³â, à òàêîae ñåíñîðè êð³îãåííèõ òåìïåðàòóð, ïðàöåçäàòí³ â ñè-ëüíèõ ìàãí³òíèõ ïîëÿõ.Ïðîâåäåíî äîñë³äaeåííÿ òåíçîðåçèñòèâíèõ âëàñòèâîñòåé øàð³â ïîë³-Si ç ð³çíîþ êîíöåíò-ðàö³ºþ íîñ³¿â ó øèðîêîìó ³íòåðâàë³ äåôîðìàö³é ³ òåìïåðàòóð. Ïðåäñòàâëåíî ðîçðîáëåí³ ì³ê-ðîåëåêòðîíí³ òåíçîðåçèñòèâí³ ñåíñîðè òèñêó ð³çíîãî ïðèçíà÷åííÿ: âèñîêî÷àñòîòí³ ñåíñîðè äëÿ àåðîäèíàì³÷íèõ äîñë³äaeåíü, ñåíñîðè òèñêó ìåäè÷íîãî ïðèçíà÷åííÿ., à òàêîae ñåíñîðè äëÿ âèì³ðþâàííÿ òèñêó ³ òåìïåðàòóðè Îïèñàíî òàêîae ñòâîðåíèé ºìí³ñíèé ì³êðîåëåêòðîí-íèé ñåíñîð äëÿ âèì³ðþâàííÿ àðòåð³àëüíîãî òèñêó. Abstract.The results of studies concerning the creation of microelectronic mechanical and thermal sensors based on silicon-on-insulator structures (SOI-structures) with laser recrystallized polysilicon layers are presented. The developed technology of microzone laser recrystallization of polySi layers is described.

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SOI Pressure Sensors Based on Laser Recrystallized Polysilicon

Cited by 7 publications

References 4 publications

Structure and magnetic properties of Si0.97Ge0.03 whiskers

Structure and magnetic properties of Si0.97Ge0.03 whiskers

Magnetic Susceptibility of Doped Si Nanowhiskers

Physical Sensors Based on Silicon- On- Insulator Structures With Recrystallized Polysilicon Layer

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