Physical Sensors Based on Silicon- On- Insulator Structures With Recrystallized Polysilicon Layer

Abstract

Àíîòàö³ÿ. Ïðåäñòàâëåíî ðåçóëüòàòè äîñë³äaeåíü ç³ ñòâîðåííÿ ì³êðîåëåêòðîííèõ ñåíñîð³â ìåõàí³÷íèõ ³ òåïëîâèõ âåëè÷èí íà îñíîâ³ ñòðóêòóð "êðåìí³é íà ³çîëÿòîð³" (ÊͲ-ñòðóêòóð) ç ðåêðèñòàë³çîâàíèõ ëàçåðîì øàðîì ïîë³êðåìí³þ. Îïèñàíî ðîçðîáëåíó òåõíîëîã³þ ì³êðîçîí-íî¿ ëàçåðíî¿ ðåêðèñòàë³çàö³¿ ïîë³-Si øàð³â.Íà îñíîâ³ ïðîâåäåíèõ äîñë³äaeåíü òåðìîðåçèñòèâíèõ õàðàêòåðèñòèê øàð³â ïîë³-Si ç ð³-çíîþ êîíöåíòðàö³ºþ íîñ³¿â çàðÿäó ðîçðîáëåíî ì³êðîåëåêòðîíí³ ñåíñîðè òåìïåðàòóðè äëÿ ð³çíèõ òåìïåðàòóðíèõ ä³àïàçîí³â, à òàêîae ñåíñîðè êð³îãåííèõ òåìïåðàòóð, ïðàöåçäàòí³ â ñè-ëüíèõ ìàãí³òíèõ ïîëÿõ.Ïðîâåäåíî äîñë³äaeåííÿ òåíçîðåçèñòèâíèõ âëàñòèâîñòåé øàð³â ïîë³-Si ç ð³çíîþ êîíöåíò-ðàö³ºþ íîñ³¿â ó øèðîêîìó ³íòåðâàë³ äåôîðìàö³é ³ òåìïåðàòóð. Ïðåäñòàâëåíî ðîçðîáëåí³ ì³ê-ðîåëåêòðîíí³ òåíçîðåçèñòèâí³ ñåíñîðè òèñêó ð³çíîãî ïðèçíà÷åííÿ: âèñîêî÷àñòîòí³ ñåíñîðè äëÿ àåðîäèíàì³÷íèõ äîñë³äaeåíü, ñåíñîðè òèñêó ìåäè÷íîãî ïðèçíà÷åííÿ., à òàêîae ñåíñîðè äëÿ âèì³ðþâàííÿ òèñêó ³ òåìïåðàòóðè Îïèñàíî òàêîae ñòâîðåíèé ºìí³ñíèé ì³êðîåëåêòðîí-íèé ñåíñîð äëÿ âèì³ðþâàííÿ àðòåð³àëüíîãî òèñêó. Abstract.The results of studies concerning the creation of microelectronic mechanical and thermal sensors based on silicon-on-insulator structures (SOI-structures) with laser recrystallized polysilicon layers are presented. The developed technology of microzone laser recrystallization of polySi layers is described.

Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields

“…Mechanical and temperature sensors for high temperature operation based on polycrystalline Si have already been demonstrated [3,4]. Our previous studies [5][6][7][8] have shown the possibility to create mechanical and temperature sensors based on laser recrystallized poly-Si layers on insulator, operating in a wide temperature range (4,2-300 К). A set of low temperature studies of doped polysilicon layers properties has to be performed to estimate the irradiation stability of such sensors on the basis of SOI-structures, irradiated with high energy electrons, and to estimate the magnetic field effect on their characteristics.…”