SOI CMOS multi-sensors MEMS chip for aerospace applications

Mansoor, Mohtashim; Haneef, Ibraheem; Akhtar, Shazia; Rafiq, M. A.; Ali, Syed Zeeshan; Udrea, F.

doi:10.1109/icsens.2014.6985225

Cited by 18 publications

(12 citation statements)

References 13 publications

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“…A silicon substrate embedded with a buried oxide layer (i.e., SOI wafer) is used. The SOI technology provides four basic advantages; i.e.,(a) the buried oxide acts as an etch stop layer for DRIE process, thus effectively controlling the etch depth and provides a uniform thickness to all sensor membranes, (b) provides a thermal isolation of sensing area, thus reducing the power losses to silicon substrate, (c) electrically isolates the electronic circuitry, reducing cross talk, and (d) increases the device operating temperatures range [132,133]. Cavities with vertical side walls are achieved using DRIE as it does not depend upon the lattice orientation of silicon substrate [6].…”

Section: Soi Cmos Mems Hot-film Sensors Chip Fabricationmentioning

confidence: 99%

Sensitivity Enhancement of Silicon-on-Insulator CMOS MEMS Thermal Hot-Film Flow Sensors by Minimizing Membrane Conductive Heat Losses

Mehmood

Haneef

Ali

et al. 2019

Sensors

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Minimizing conductive heat losses in Micro-Electro-Mechanical-Systems (MEMS) thermal (hot-film) flow sensors is the key to minimize the sensors’ power consumption and maximize their sensitivity. Through a comprehensive review of literature on MEMS thermal (calorimetric, time of flight, hot-film/hot-film) flow sensors published during the last two decades, we establish that for curtailing conductive heat losses in the sensors, researchers have either used low thermal conductivity substrate materials or, as a more effective solution, created low thermal conductivity membranes under the heaters/hot-films. However, no systematic experimental study exists that investigates the effect of membrane shape, membrane size, heater/hot-film length and M e m b r a n e (size) to H e a t e r (hot-film length) Ratio (MHR) on sensors’ conductive heat losses. Therefore, in this paper we have provided experimental evidence of dependence of conductive heat losses in membrane based MEMS hot-film flow sensors on MHR by using eight MEMS hot-film flow sensors, fabricated in a 1 µm silicon-on-insulator (SOI) CMOS foundry, that are thermally isolated by square and circular membranes. Experimental results demonstrate that: (a) thermal resistance of both square and circular membrane hot-film sensors increases with increasing MHR, and (b) conduction losses in square membrane based hot-film flow sensors are lower than the sensors having circular membrane. The difference (or gain) in thermal resistance of square membrane hot-film flow sensors viz-a-viz the sensors on circular membrane, however, decreases with increasing MHR. At MHR = 2, this difference is 5.2%, which reduces to 3.0% and 2.6% at MHR = 3 and MHR = 4, respectively. The study establishes that for membrane based SOI CMOS MEMS hot-film sensors, the optimum MHR is 3.35 for square membranes and 3.30 for circular membranes, beyond which the gain in sensors’ thermal efficiency (thermal resistance) is not economical due to the associated sharp increase in the sensors’ (membrane) size, which makes sensors more expensive as well as fragile. This paper hence, provides a key guideline to MEMS researchers for designing the square and circular membranes-supported micro-machined thermal (hot-film) flow sensors that are thermally most-efficient, mechanically robust and economically viable.

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Section: Soi Cmos Mems Hot-film Sensors Chip Fabricationmentioning

confidence: 99%

Sensitivity Enhancement of Silicon-on-Insulator CMOS MEMS Thermal Hot-Film Flow Sensors by Minimizing Membrane Conductive Heat Losses

Mehmood

Haneef

Ali

et al. 2019

Sensors

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“…The design exploits recent progress in MEMS technology, in particular the development of multi-sensor chips (e.g. Mansoor et al, 2014). The head of the probe consists of a cylinder with an angled face, upon which a single MEMS chip containing several sensors is mounted.…”

Section: Introductionmentioning

confidence: 99%

A Novel MEMS-Based Probe for Unsteady Aerodynamic Measurements: A Proof-of-Concept Study

Morris

Coull

Dickens

et al. 2020

J. Glob. Power Propuls. Soc.

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A novel MEMS-based probe is described which is capable of measuring unsteady flow angles, total pressure and velocity. Uniquely, this probe uses shear stress sensors to relate the surface streamline directions on the probe face to the freestream flow angles. The probe has the potential to be miniaturised to around 1 mm in diameter and achieve a temporal resolution of up to several 100 kHz. A computational study of virtual calibrations is used to understand how to adjust the probe geometry and sensor locations to maximise the sensitivity and range of the device. The most promising configuration was calibrated experimentally using a large-scale probe to demonstrate the feasibility of the concept.

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“…Thus, the SOI platform is of great interest in many application fields, such as SOI-based electron-photonic integrated circuits (EPICs) and next-generation systems-on-chip with low power consumption and high speed [7]- [9]. Besides, thanks to their high tolerance to transient radiation effects, SOI substrates are also favored in aerospace applications [10]. Other applications, such as optical communication, image sensing, and photodetection are also widely explored in SOI because of high radiation hardness, as well as compatibility with SOI electronics and photonics [11]- [14].…”

Section: Introductionmentioning

confidence: 99%

Dynamic Coupling Effect in Z²-FET and Its Application for Photodetection

Liu

Cao

et al. 2019

IEEE J. Electron Devices Soc.

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In this paper, the application of the zero subthreshold swing and zero impact ionization FET (Z 2 -FET) for photodetection is studied with TCAD simulation. Dynamic coupling effect is utilized to form carrier injection barriers in the partially depleted silicon-on-insulator (PD-SOI) film. Photoelectron accumulation at the front gate interface lowers the hole injection barrier and modulates the turn-on voltage. The light-triggering threshold of the device can be tuned by the front gate voltage, which controls the injection barrier height. We explore two operation modes suited to different applications, and demonstrate the operation of a one-transistor active pixel sensor array. Unlike other image sensors that utilize only one type of carrier, the Z 2 -FET photodetector uses photo-generated holes to induce high electron currents through internal amplification, leading to a high sensitivity of up to 1.8 × 10 5 e-/(lux•s).INDEX TERMS Z 2 -FET, dynamic coupling effect, silicon-on-insulator, photodetection.

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SOI CMOS multi-sensors MEMS chip for aerospace applications

Cited by 18 publications

References 13 publications

Sensitivity Enhancement of Silicon-on-Insulator CMOS MEMS Thermal Hot-Film Flow Sensors by Minimizing Membrane Conductive Heat Losses

Sensitivity Enhancement of Silicon-on-Insulator CMOS MEMS Thermal Hot-Film Flow Sensors by Minimizing Membrane Conductive Heat Losses

A Novel MEMS-Based Probe for Unsteady Aerodynamic Measurements: A Proof-of-Concept Study

Dynamic Coupling Effect in Z²-FET and Its Application for Photodetection

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SOI CMOS multi-sensors MEMS chip for aerospace applications

Cited by 18 publications

References 13 publications

Sensitivity Enhancement of Silicon-on-Insulator CMOS MEMS Thermal Hot-Film Flow Sensors by Minimizing Membrane Conductive Heat Losses

Sensitivity Enhancement of Silicon-on-Insulator CMOS MEMS Thermal Hot-Film Flow Sensors by Minimizing Membrane Conductive Heat Losses

A Novel MEMS-Based Probe for Unsteady Aerodynamic Measurements: A Proof-of-Concept Study

Dynamic Coupling Effect in Z2-FET and Its Application for Photodetection

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Product

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Dynamic Coupling Effect in Z²-FET and Its Application for Photodetection