2019
DOI: 10.1109/jeds.2019.2918203
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Dynamic Coupling Effect in Z2-FET and Its Application for Photodetection

Abstract: In this paper, the application of the zero subthreshold swing and zero impact ionization FET (Z 2 -FET) for photodetection is studied with TCAD simulation. Dynamic coupling effect is utilized to form carrier injection barriers in the partially depleted silicon-on-insulator (PD-SOI) film. Photoelectron accumulation at the front gate interface lowers the hole injection barrier and modulates the turn-on voltage. The light-triggering threshold of the device can be tuned by the front gate voltage, which controls th… Show more

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Cited by 11 publications
(4 citation statements)
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“…The application of Z 2 -FET was extended to the photodetection via simulation by Jian et al [56][57][58] The ultrathin top silicon layer in fully-depleted silicon-on-insulator (FDSOI) results in weak light absorption efficiency. This is why partially depleted PD-SOI with thicker silicon layer was used for photodetection.…”
Section: The Z 2 -Fet-based Photodetectormentioning
confidence: 99%
“…The application of Z 2 -FET was extended to the photodetection via simulation by Jian et al [56][57][58] The ultrathin top silicon layer in fully-depleted silicon-on-insulator (FDSOI) results in weak light absorption efficiency. This is why partially depleted PD-SOI with thicker silicon layer was used for photodetection.…”
Section: The Z 2 -Fet-based Photodetectormentioning
confidence: 99%
“…Light is detected by the abrupt switch from low to high anode current. The turn-on voltage under illumination is the sensing parameter [54,55].…”
Section: Photo-detectionmentioning
confidence: 99%
“…In Figure 22b, a very small variation in charge density (10 11 cm −2 ) leads to a shift of V ON as large as 1 V, showing outstanding detection capability. [54,55]).…”
Section: Bio-sensingmentioning
confidence: 99%
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