Software and hardware complex for studying semiconductor devices at low, incl. cryogenic, temperatures

Dvornikov, O.; Dziatlau, V. L.; Prokopenko, N. N.

doi:10.1109/uralcon.2017.8120719

Cited by 5 publications

(1 citation statement)

References 14 publications

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“…The low-temperature measurements are carried out on the experimental setup, given in Fig. 1 [29,30]. The measured transistors are located in a metal glass, placed in the liquid nitrogen with the help of a rod with a wire harness of twisted pairs inside for connection of the semiconductor units to the tester IPPP-1.…”

Section: Design Of Low-temperature Ddoas On the Elements Of Bijfet Armentioning

confidence: 99%

Design of low-temperature DDOAs on the elements of BiJFet array chip MH2XA030

Dvornikov¹,

Tchekhovski

Dziatlau

et al. 2018

Serb J Electr Eng

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Brief information about the new BiJFet array chip (AC) MH2XA030 intended for accelerated creation of analog integrated circuits (IC), which retain their performance under the influence of penetrating radiation and extremely low temperatures (up to minus 197 °С) is presented. The features of schematic design of two types of DDOAs (OAmp3, OAmp4) are considered. The recommendations on the schematic design of the DDOA are developed taking into account the static characteristics of the field effect and bipolar transistors of the AC under the influence of low temperatures. The amplitude-frequency response of the DDOA and the dependence of the noise voltage on the frequency of Fourier density are given. At a temperature of-197°С cryogenic amplifiers OAmp3 (OAmp4) are characterized by the following parameters: the current consumption is less than 500 μA, the input current is less than 1 fA, the voltage gain is more than 50.000 (200.000), the offset voltage is less than 200 (60) μV. The results of the circuit simulation of the instrumentation amplifier based on DDOA OAmp3 are presented.

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Section: Design Of Low-temperature Ddoas On the Elements Of Bijfet Armentioning

confidence: 99%