Compact Si JFET model for cryogenic temperature

Petrosyants, Konstantin O.; Ismail-zade, Mamed R.; Sambursky, Lev M.

doi:10.1016/j.cryogenics.2020.103069

Cited by 3 publications

(1 citation statement)

References 18 publications

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“…As quantum algorithms grow in complexity, leveraging well-established CMOS technology presents an avenue to streamline interconnections, ensuring both the compactness and scalability of quantum processors [18,19]. Despite successful experimental demonstrations of electronic devices functioning at cryogenic temperatures [20,21], the modeling and simulation of these devices at 4 K or lower temperatures remain an ongoing developmental pursuit [22][23][24][25][26][27][28][29][30][31]. Lowering the ambient temperature notably enhances device performance, characterized by reduced thermal noise, an increased I ON /I OFF ratio, and a sharper subthreshold swing.…”

Section: Introductionmentioning

confidence: 99%

Exploring Intertwined quantum and cryogenic behaviour in ultra-scaled 10 nm MOSFET: a NEGF quantum ballistic simulation

Anam,

Amin,

Prasad

2024

Phys. Scr.

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Silicon-based spin qubits have emerged as promising candidates for scalable quantum information processing. This study first time investigates the behaviour of ultra-scaled 10nm gate length and 3nm channel thickness nanoscale double gate metal-oxide semiconductor field-effect transistors (MOSFETs) over a broad temperature range, from deep cryogenic (4 K) to room temperature (300 K). Employing the Non-Equilibrium Green's Function (NEGF) method, the research explores the intertwined quantum and cryogenic behaviours of the various quantum phenomena, including eigen energies, eigen-functions, electron concentration, current characteristics, and more. This comprehensive analysis sheds light on the intricate interplay of quantum effects in nanoscale transistors under deep cryogenic conditions, offering valuable insights into the development of cryo-CMOS circuits for quantum computing.

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Section: Introductionmentioning

confidence: 99%

Exploring Intertwined quantum and cryogenic behaviour in ultra-scaled 10 nm MOSFET: a NEGF quantum ballistic simulation

Anam,

Amin,

Prasad

2024

Phys. Scr.

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Exploring Intertwined Quantum and Cryogenic Behaviour in Ultra-Scaled 10nm Mosfet: A Negf Quantum Ballistic Simulation

Anam,

Amin,

Prasad

2024

Preprint

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Experimental studies and a double gate JFET model for analog integrated circuits

Galkin

Дворников²,

Tchekhovski

et al. 2021

Doklady Belorusskogo gosudarstvennogo universiteta informatiki

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One of directions of improving parameters of analog integrated circuits is a development of new and modernization of existing designs of integrated elements without significantly changing of a technological route of integrated circuit manufacturing with a simultaneous creation of new integrated elements models. The article considers the results of experimental studies of the double gate junction field-effect transistor manufactured according to the 3CBiT technological route of JSC Integral. Based on the obtained results, the electrical model of double gate junction field-effect transistor is proposed, which describes the features of its application in analog integrated circuits. Comparison of I-V characteristics of measurements results and created model simulation are presented. A small capacity and a reverse current of a double gate junction field-effect transistor top gate, an ability to compensate for the DC (direct current) component of an input current provide a significant improvement in the characteristics of analog integrated circuits such as electrometric operational amplifiers and charge-sensitive amplifiers. The developed double gate junction field-effect transistor can be used in signal readout devices required in the analog interfaces of space instrument sensors and nuclear electronics.

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Compact Si JFET model for cryogenic temperature

Cited by 3 publications

References 18 publications

Exploring Intertwined quantum and cryogenic behaviour in ultra-scaled 10 nm MOSFET: a NEGF quantum ballistic simulation

Exploring Intertwined quantum and cryogenic behaviour in ultra-scaled 10 nm MOSFET: a NEGF quantum ballistic simulation

Exploring Intertwined Quantum and Cryogenic Behaviour in Ultra-Scaled 10nm Mosfet: A Negf Quantum Ballistic Simulation

Experimental studies and a double gate JFET model for analog integrated circuits

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