One of directions of improving parameters of analog integrated circuits is a development of new and modernization of existing designs of integrated elements without significantly changing of a technological route of integrated circuit manufacturing with a simultaneous creation of new integrated elements models. The article considers the results of experimental studies of the double gate junction field-effect transistor manufactured according to the 3CBiT technological route of JSC Integral. Based on the obtained results, the electrical model of double gate junction field-effect transistor is proposed, which describes the features of its application in analog integrated circuits. Comparison of I-V characteristics of measurements results and created model simulation are presented. A small capacity and a reverse current of a double gate junction field-effect transistor top gate, an ability to compensate for the DC (direct current) component of an input current provide a significant improvement in the characteristics of analog integrated circuits such as electrometric operational amplifiers and charge-sensitive amplifiers. The developed double gate junction field-effect transistor can be used in signal readout devices required in the analog interfaces of space instrument sensors and nuclear electronics.
The experimental findings of the main units of readout electronics of silicon photomultipliers (SiPMs) based on array chip (AC) МН2ХА030: a charge-sensitive amplifier (CSA) with an adjustable conversion factor and a base line restorer (BLR) circuit and two types of voltage comparators are considered. The electrical circuits of the units, the measurement results of static and dynamic parameters are given.
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