Soft X-ray Photoemission Study of New BiS2-Layered Superconductor LaO1−xFxBiS2

Nagira, Shinsuke; Sonoyama, Junki; Wakita, Takanori; Sunagawa, Masanori; Izumi, Yudai; Matsuki, Takayuki; Kumigashira, Hiroshi; Oshima, Masaharu; Deguchi, K.; Okazaki, Hiroyuki; Takano, Yoshihiko; Miura, Osuke; Mizuguchi, Yoshikazu; Suzuki, Katsuhiro; Usui, Hidetomo; Kuroki, Kazuhiko; Okada, Kozo; Muraoka, Yuji; Yokoya, Takayoshi

doi:10.7566/jpsj.83.033703

Cited by 28 publications

(28 citation statements)

References 27 publications

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“…The major intensity distributions indicate the partial density of states (pDOS) of O 2p and S 3p multiplied photoemission cross sections. Actually, the spectral shapes closely resemble the valence band spectra reported for the polycrystalline LaO 1−x F x BiS 2 which has no f electron [41]. The band calculation for LaO 1−x F x BiS 2 shows that the DOS of the occupied valence states in the lower binding energy region mainly consists of S 3p and that in the higher binding energy region mainly originate from O 2p [42].…”

Section: Off-resonant Spectrasupporting

confidence: 72%

“…In the magnified off-resonant spectra of near the E F region in Fig. 2(a), one observes that it has a clear Fermi edge, which is considered that mainly derived from Bi 6p states [41,43]. In Fig.…”

Section: Off-resonant Spectramentioning

confidence: 85%

“…The thick arrow indicates the 4f -derived band, which is not observed in the ARPES data measured for LaO 0.54 F 0.46 BiS 2 [53]. The thin arrow shows the electron pocket band derived mainly from Bi 6p [41,43].…”

Section: F-concentration Dependence Of the Valence Band Spectramentioning

confidence: 92%

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Ce 4f electronic states of CeO1−xFxBiS2 studied by sof

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Section: Off-resonant Spectrasupporting

confidence: 72%

Section: Off-resonant Spectramentioning

confidence: 85%

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Ce 4f electronic states of CeO1−xFxBiS2 studied by sof

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“…We also observe a nondispersive component at ∼ 9 eV, which is a shallow core level of F 2p. Along the (Z)−X(R) direction, the bottom of the valence band is at the (Z) point, while the top is near the X(R) point with an energy gap of about 0.8 eV to the bottom of the Bi 6p-dominant band crossing E F [15,34]. We find a clear discrepancy in the number of electron pockets near the X(R) point between our experimental result and earlier theoretical band dispersions without spin-orbit coupling.…”

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confidence: 99%

Proximity to Fermi-surface topological change in superconductingLaO0.54F0.46BiS2

et al. 2014

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The electronic structure of nearly optimally doped novel superconductor LaO 1−x F x BiS 2 (x = 0.46) was investigated using angle-resolved photoemission spectroscopy (ARPES). We clearly observed band dispersions from 2 to 6 eV binding energy and near the Fermi level (E F ), which are well reproduced by first-principles calculations when the spin-orbit coupling is taken into account. The ARPES intensity map near E F shows a squarelike distribution around the (Z) point in addition to electronlike Fermi-surface (FS) sheets around the X(R) point, indicating that FS of LaO 0.54 F 0.46 BiS 2 is in close proximity to the theoretically predicted topological change.

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“…Core-level and valence-band soft X-ray photoemission spectroscopy (SXPES) [24] were used to investigate the electronic structure of LaO 1−x F x BiS 2 (x = 0, 0.3, 0.5), which was found to be mainly consistent with predictions of DFT calculations, including the doping dependence. [7,14,25] Nevertheless, a deviation was found between the experimental intensity and spectral shape of the states near E F in comparison with those calculated.…”

Section: Introductionmentioning

confidence: 55%

Normal state electronic properties ofLaO1−xFx
Querales-Flores
¹
,
Ventura
²
,
Citro
³

et al. 2016
Physica B: Condensed Matter
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A good description of the electronic structure of BiS2-based superconductors is essential to understand their phase diagram, normal state and superconducting properties. To describe the first reports of normal state electronic structure features from angle resolved photoemission spectroscopy (ARPES) in LaO1−xFxBiS2, we used a minimal microscopic model to study their low energy properties. It includes the two effective tight-binding bands proposed by Usui et al [Phys.Rev.B 86, 220501(R) (2012)], and we added moderate intra-and inter-orbital electron correlations related to Bi-(pY , pX) and S-(pY , pX ) orbitals. We calculated the electron Green's functions using their equations of motion, which we decoupled in second-order of perturbations on the correlations. We determined the normal state spectral density function and total density of states for LaO1−xFxBiS2, focusing on the description of the k-dependence, effect of doping, and the prediction of the temperature dependence of spectral properties. Including moderate electron correlations, improves the description of the few experimental ARPES and soft X-ray photoemission data available for LaO1−xFxBiS2. Our analytical approximation enabled us to calculate the spectral density around the conduction band minimum at k0 = (0.45π, 0.45π), and to predict the temperature dependence of the spectral properties at different BZ points, which might be verified by temperature dependent ARPES.

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Soft X-ray Photoemission Study of New BiS₂-Layered Superconductor LaO₁₋_xF_xBiS₂

Cited by 28 publications

References 27 publications

Ce 4f electronic states of CeO1−xFxBiS2 studied by sof

Ce 4f electronic states of CeO1−xFxBiS2 studied by sof

Proximity to Fermi-surface topological change in superconductingLaO0.54F0.46BiS2

Normal state electronic properties ofLaO1−xFx
Querales-Flores
¹
,
Ventura
²
,
Citro
³

et al. 2016
Physica B: Condensed Matter
2
0
6
0
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Soft X-ray Photoemission Study of New BiS2-Layered Superconductor LaO1−xFxBiS2

Cited by 28 publications

References 27 publications

Ce 4f electronic states of CeO1−xFxBiS2 studied by sof

Ce 4f electronic states of CeO1−xFxBiS2 studied by sof

Proximity to Fermi-surface topological change in superconductingLaO0.54F0.46BiS2

Normal state electronic properties ofLaO1−xFxQuerales-Flores1, Ventura2, Citro3 et al. 2016Physica B: Condensed Matter2060View full textAdd to dashboardCite

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Soft X-ray Photoemission Study of New BiS₂-Layered Superconductor LaO₁₋_xF_xBiS₂

Normal state electronic properties ofLaO1−xFx
Querales-Flores
¹
,
Ventura
²
,
Citro
³

et al. 2016
Physica B: Condensed Matter
2
0
6
0
View full text Add to dashboard Cite