2017
DOI: 10.1103/physrevb.95.085109
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Ce 4f electronic states of CeO1xFxBiS2 studied by sof

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Cited by 5 publications
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“…2). It should be mentioned that no rigid shift has been found in photoemission studies on CeOBiS 2 system as a function of charge doping induced by F-substitution in place of O 26 . Here, the average shift between different features in Figs 2 and 3 is ∼0.1–0.2 eV, consistent with earlier study on the same system.
Figure 3Fermi surfaces for metallic phase at A-point ( a ) and those for semiconducting phase at B-point ( b ) (A- and B-points are indicated in Fig.
…”
Section: Introductionmentioning
confidence: 94%
“…2). It should be mentioned that no rigid shift has been found in photoemission studies on CeOBiS 2 system as a function of charge doping induced by F-substitution in place of O 26 . Here, the average shift between different features in Figs 2 and 3 is ∼0.1–0.2 eV, consistent with earlier study on the same system.
Figure 3Fermi surfaces for metallic phase at A-point ( a ) and those for semiconducting phase at B-point ( b ) (A- and B-points are indicated in Fig.
…”
Section: Introductionmentioning
confidence: 94%