Soft Error Issues with Scaling Technologies

Baeg, Sanghyeon; Bae, Jongsun; Lee, Soon-Young; Lim, Chun Kyu; Jeon, Sang Hoon; Nam, Hyeonwoo

doi:10.1109/ats.2012.72

Cited by 2 publications

(1 citation statement)

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“…Nevertheless, since shielding technique effectiveness has shown important limitations [1] [2] and transistor scaling leads to a relevant impact of soft error even in terrestrial environment [3] designing a radiation-hard IC becomes a real challenge. Thus, several designs have been proposed mainly based on hardware and time redundancy.…”

Section: Introduction and Related Workmentioning

confidence: 99%

Spin-Transfer Torque Magnetic Tunnel Junction for Single-Event Effects Mitigation in IC Design

Coi

Pendina

Prenat

et al. 2020

IEEE Trans. Nucl. Sci.

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For embedded systems in harsh environments, a radiation robust circuit design is still an open challenge. As complementary metal oxide semiconductor (CMOS) processes get denser and smaller, their immunity towards particle strikes decreases drastically. Due to its radiation effects good tolerance and its inherent non-volatility, Spin-Transfer Torque Magnetic Tunnel Junction (STT-MTJ) is considered a promising candidate for high reliability electronics. Nevertheless, when integrated in CMOS circuit, these magnetic devices could be still affected by upsets. To decrease the probability of this occurrence, a radiation robust setup is used to calibrate a physics-based 20 nm MTJ compact model, integrated in a 28 nm Fully Depleted Silicon on Insulator Technology. Thus, a radiation hardening by design (RHBD) solution is presented, where a non-volatile sequential block enables one to mitigate the Single Event Effects (SEEs).

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Section: Introduction and Related Workmentioning

confidence: 99%