SoC and SiP, the Yin and Yang of the Tao for the New Electronic Era

Maurelli, A.; Belot, Didier; Campardo, G.

doi:10.1109/jproc.2008.2007453

Cited by 12 publications

(2 citation statements)

References 27 publications

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“…In SiP, different function sections can be made by different technologies, which build up a whole system in a package. In comparison to SOC, SiP has been featured with the following advantages [1][2]:…”

Section: Soc and Sipmentioning

confidence: 99%

System integration using silicon-based integrated passive device technology

Sun

Chen

Sun³

2012

2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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Section: Soc and Sipmentioning

confidence: 99%

System integration using silicon-based integrated passive device technology

Sun

Chen

Sun³

2012

2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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“…The silicon founders need to find new very reliable and low cost solutions in order to provide high performance electronic circuits for the embedded applications [1]. In this context the nonvolatile memories (NVM) play a key role for the systems on chip (SoC) [2].…”

Section: Introductionmentioning

confidence: 99%

NVM cell degradation induced by femtosecond laser backside irradiation for reliability tests

Marca¹,

Chambonneau²,

Souiki-Figuigui³

et al. 2016

2016 IEEE International Reliability Physics Symposium (IRPS)

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In this paper we present the behavior of a single nonvolatile Flash floating gate memory cell when it is irradiated, from the backside, by femtosecond laser pulses. For the first time we show that the memory cell state can change using this type of stimulation. The measurements were carried out with an experimental setup with an ad hoc probe station built around the optical bench. We present the experimental results using different memory bias conditions to highlight the charge injection in the floating gate. Then, we study the cell degradation to check the state of the tunnel oxide and the drain-bulk junction. The aim is to understand the failure mechanisms and use this technique for accelerated reliability tests. Finally we report the experimental results achieved for different laser energies.

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Historical Overview of Solid-State Non-Volatile Memories

Campardo¹

2017

In Search of the Next Memory

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SoC and SiP, the Yin and Yang of the Tao for the New Electronic Era

Cited by 12 publications

References 27 publications

System integration using silicon-based integrated passive device technology

System integration using silicon-based integrated passive device technology

NVM cell degradation induced by femtosecond laser backside irradiation for reliability tests

Historical Overview of Solid-State Non-Volatile Memories

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