SnSe: a remarkable new thermoelectric material

Zhao, Li‐Dong; Chang, Cheng; Tan, Gangjian; Kanatzidis, Mercouri G.

doi:10.1039/c6ee01755j

Cited by 457 publications

(370 citation statements)

References 119 publications

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“…However, even with stoichio metric simplicity, bulk materials with 2D structures possess complex electronic structures due to their complex bonding conditions. [92] The in plane direction always has a smaller effec tive mass than the out of plane direction for electron transport, indicating a larger carrier mobility along the in plane direction; however, this is not necessary. [93] Phonon transport is completely different, as the wavelengths of phonons can vary from the atomic scale to the mesoscopic www.advmat.de www.advancedsciencenews.com scale.…”

Section: Transport Mechanisms In Bulk Materials With 2d Structuresmentioning

confidence: 99%

“…Therefore, it was not considered as a candidate for TE applications but is instead used in solar cells, optoelectronics, and other electronic devices. [92] Changes occurred recently as a strikingly high ZT value was realized in SnSe crystals by utilizing its strongly anisotropic transport properties. [11] SnSe possesses a simple layered orthorhombic structure derived from the three dimensional distortion of the rock salt structure.…”

Section: Snsementioning

confidence: 99%

“…Moreover, lone pairs from the Sn 2+ atoms tend to stereochemically express themselves and hence are accommo dated between the four weak SnSe bonds. [92] The interaction type of the weak SnSe bonds is still unknown. A shear pres sure study on SnSe refers to this interaction as being van der Waals like.…”

Section: Snsementioning

confidence: 99%

“…The thermal conductivities of polycrystals prepared in air and in a glove box are also compared in Figure 5a to illustrate the influence of surface oxidation. [92] While SnO 2 possesses a high thermal conductivity of ≈98 W m −1 K −1 , [111] the thermal conductivity of the oxidized SnSe polycrystal is certainly higher than that of the pristine one. It has been reported that with trace SnO 2 added to SnSe powders, the thermal diffusivity of SnSe polycrystals shows a significant increase, even higher than that prepared in air.…”

Section: Wwwadvmatde Wwwadvancedsciencenewscommentioning

confidence: 99%

“…It has been reported that with trace SnO 2 added to SnSe powders, the thermal diffusivity of SnSe polycrystals shows a significant increase, even higher than that prepared in air. [92] This may be related to a second amorphous layer existing underneath the surface oxide. [105] As shown in Figure 5c, oxidation of the surface of the SnSe single crystal produces two different layers: oxide and amorphous Sn 1−x Se.…”

Section: Wwwadvmatde Wwwadvancedsciencenewscommentioning

confidence: 99%

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Promising Thermoelectric Bulk Materials with 2D Structures

2017

Self Cite

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Given that more than two thirds of all energy is lost, mostly as waste heat, in utilization processes worldwide, thermoelectric materials, which can directly convert waste heat to electricity, provide an alternative option for optimizing energy utilization processes. After the prediction that superlattices may show high thermoelectric performance, various methods based on quantum effects and superlattice theory have been adopted to analyze bulk materials, leading to the rapid development of thermoelectric materials. Bulk materials with two‐dimensional (2D) structures show outstanding properties, and their high performance originates from both their low thermal conductivity and high Seebeck coefficient due to their strong anisotropic features. Here, the advantages of superlattices for enhancing the thermoelectric performance, the transport mechanism in bulk materials with 2D structures, and optimization methods are discussed. The phenomenological transport mechanism in these materials indicates that thermal conductivities are reduced in 2D materials with intrinsically short mean free paths. Recent progress in the transport mechanisms of Bi2Te3‐, SnSe‐, and BiCuSeO‐based systems is summarized. Finally, possible research directions to enhance the thermoelectric performance of bulk materials with 2D structures are briefly considered.

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Section: Transport Mechanisms In Bulk Materials With 2d Structuresmentioning

confidence: 99%

Section: Snsementioning

confidence: 99%

Section: Snsementioning

confidence: 99%

Section: Wwwadvmatde Wwwadvancedsciencenewscommentioning

confidence: 99%

Section: Wwwadvmatde Wwwadvancedsciencenewscommentioning

confidence: 99%

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Promising Thermoelectric Bulk Materials with 2D Structures

2017

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Thermoelectric Materials

Owens‐Baird

Heinrich

Kovnir

2017

Encyclopedia of Inorganic and Bioinorganic Chemistry

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The field of thermoelectric materials has flourished over the last two decades. Significant successes achieved in the development of materials notwithstanding, novel and highly efficient materials are in steep demand due to a wide range of potential and current applications, ranging from wearable electronics to space missions. The main challenge in the improvement of the thermoelectric figure of merit ( zT ) is to optimize the intertwined intrinsic charge and thermal transport properties. High electrical conductivity and thermopower, along with low thermal conductivity, need to be achieved simultaneously to excel the thermoelectric efficiency. In this review, the thermoelectric concepts, basics of transport properties, and strategies for zT optimization are discussed in the first section. In the following sections, the predominate structure types associated with high‐performance bulk thermoelectric materials are discussed in detail: Bi 2 Te 3 , PbTe, TAGS/LAST systems, SnSe, Cu 2− x Se, chalcopyrites, tetrahedrites, clathrates, skutterudites, zinc antimonides, Yb 14 MnSb 11 , Heusler and half‐Heusler intermetallics. The basic crystal structures, the possibilities for doping and substitutions to adjust charge carrier concentration and thermal conductivity, baseline thermoelectric properties, and strategies for efficiency improvement are considered for each structure type. Examples of recent work highlighting these strategies are briefly presented.

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Thermal Transport in 2D Semiconductors—Considerations for Device Applications

Zhao

Cai

Zhang

et al. 2019

Adv Funct Materials

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The discovery of graphene has stimulated the search for and investigations into other 2D materials because of the rich physics and unusual properties exhibited by many of these layered materials. Transition metal dichalcogenides (TMDs), black phosphorus, and SnSe among many others, have emerged to show highly tunable physical and chemical properties that can be exploited in a whole host of promising applications. Alongside the novel electronic and optical properties of such 2D semiconductors, their thermal transport properties have also attracted substantial attention. Here, a comprehensive review of the unique thermal transport properties of various emerging 2D semiconductors is provided, including TMDs, black‐ and blue‐phosphorene among others, and the different mechanisms underlying their thermal conductivity characteristics. The focus is placed on the phonon‐related phenomena and issues encountered in various applications based on 2D semiconductor materials and their heterostructures, including thermoelectric power generation and electron–phonon coupling effect in photoelectric and thermal transistor devices. A thorough understanding of phonon transport physics in 2D semiconductor materials to inform thermal management of next‐generation nanoelectronic devices is comprehensively presented along with strategies for controlling heat energy transport and conversion.

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SnSe: a remarkable new thermoelectric material

Abstract: It is remarkable that SnSe exhibits complex band structures and strong anharmonic bonding, endowing it with a high power factor and low thermal conductivity.

Cited by 457 publications

References 119 publications

Promising Thermoelectric Bulk Materials with 2D Structures

Promising Thermoelectric Bulk Materials with 2D Structures

Thermoelectric Materials

Thermal Transport in 2D Semiconductors—Considerations for Device Applications

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