SnS thin films fabricated by pulsed and normal electrochemical deposition

Takeuchi, Kenta; Ichimura, M.; Arai, Eisuke; Yamazaki, Yoko

doi:10.1016/s0927-0248(02)00192-7

Cited by 69 publications

(39 citation statements)

References 8 publications

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“…(4) and this value is in a good agreement with the obtained value by Roy et al [27], T. Keuchi et al [28] and Doña and Herrero [29]. The imaginary part of the complex index of refraction k is a measure of the fraction of light lost due to scattering and absorption per unit distance of the penetration medium.…”

Section: International Letters Of Chemistry Physics and Astronomy Vosupporting

confidence: 86%

Optical and Dispersion Parameters of ZnS Thin Films Prepared by Flash Evaporation Method

Bakr

Jandow

Habubi

2014

ILCPA

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Zns thin films are obtained by flash evaporation method onto preheated glass substrates. The transmittance analysis allowed the determination of refractive index and thickness using envelope method. It was found that the refractive dispersion data obeyed the single oscillator model. The calculated value of the refractive index (n o ) was found to be equal to 2.27, which is in a good agreement with the value obtained from Cauchy's fitting. Also the value of the optical energy gap, extinction coefficient, real and imaginary parts of the dielectric constant and optical conductivity have been measured.

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Section: International Letters Of Chemistry Physics and Astronomy Vosupporting

confidence: 86%

Optical and Dispersion Parameters of ZnS Thin Films Prepared by Flash Evaporation Method

Bakr

Jandow

Habubi

2014

ILCPA

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“…Additionally, it has the advantage of its constituent elements being abundant in nature and not possessing any health and environmental hazards. Therefore, SnS can be potentially used as photovoltaic materials [9,10] and as a holographic recording medium [11].…”

Section: Introductionmentioning

confidence: 99%

Structure and optical properties of SnS thin film prepared by pulse electrodeposition

Yue

Peng

Yan

et al. 2009

Journal of Alloys and Compounds

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“…SnS thin films have been deposited by different techniques such as: the vacuum evaporation of the SnS compound [5], two stage process [6] and electrochemical deposition [7]. In this work, thin films of SnS have been grown by coevaporation of the precursor species.…”

Section: Introductionmentioning

confidence: 99%

Optical and structural studies on SnS films grown by co-evaporation

et al. 2006

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Polycrystalline SnS thin films were grown on glass substrates using a novel procedure involving a chemical reaction between the precursor species evaporated simultaneously. This is a relatively new material, which exhibits excellent properties to be used as absorbent layer in solar cells. X-ray diffraction (XRD) measurements indicate that the synthesized samples grow in several phases (SnS, SnS 2 and Sn 2 S 3 ) depending upon the deposition conditions. However, through an exhaustive parameter study, conditions were found to grow thin films predominantly in the SnS phase with orthorhombic structure. It was found that this type of compound presents p-type conductivity, a high absorption coefficient (greater than 10 4 cm −1 ) and an energy band gap E g of about 1.3 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.

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SnS thin films fabricated by pulsed and normal electrochemical deposition

Cited by 69 publications

References 8 publications

Optical and Dispersion Parameters of ZnS Thin Films Prepared by Flash Evaporation Method

Optical and Dispersion Parameters of ZnS Thin Films Prepared by Flash Evaporation Method

Structure and optical properties of SnS thin film prepared by pulse electrodeposition

Optical and structural studies on SnS films grown by co-evaporation

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