SnO deposition via water based ALD employing tin(ii) formamidinate: precursor characterization and process development

Abstract

Tin monoxide (SnO) is a promising oxide semiconductor which is appealing for a range of applications ranging from channel materials in p-type field effect transistors (FET) to electrode materials searched...

Interplay of Precursor and Plasma for The Deposition of HfO2 via PEALD: Film Growth and Dielectric Properties

“…Most importantly the reactivity of the compounds is higher which falls in line with the feature recently reported by Gordon and our group for metalorganic complexes featuring N , N ’‐diisopropylformamidine ligands for the ALD growth of metal oxides at low temperatures. [ 50,51,56 ]…”

“…Most importantly the reactivity of the compounds is higher which falls in line with the feature recently reported by Gordon and our group for metalorganic complexes featuring N,N'-diisopropylformamidine ligands for the ALD growth of metal oxides at low temperatures. [50,51,56] The purity of compounds 1 and 2 as well as their structure in solution was investigated by 1 H and 13 C nuclear magnetic resonance (NMR) spectroscopy, revealing the successful formation of the desired bis-substituted products. The obtained 1 H NMR spectra are shown in Figure 1 with peaks assigned to the respective protons, while the 13 C ones are summarized in Figure S1 (Supporting Information).…”

Group 11–14 Triazenides : Synthesis, characterization, and thermal evaluation for use in chemical vapor deposition

“…For the p-block metals, the amidinate ligand system has yielded Sn(II) and In(III) amidinates suitable for vapor deposition. For example, Sn(II) amidinates have been used for ALD of SnS 78,79 and SnO 80 . Recently, the amidinates and guanidinates have also been used for ALD of InN.…”

Multi-pulse atomic layer deposition of p-type SnO thin films: growth processes and the effect on TFT performance

“…To-date only a limited number of precursors for the ALD of SnO have been described, 17,18 with fewer capable of depositing films with desirable p-type properties. Of these, the most notable is the tin( ii ) aminoalkoxide complex, Sn(dmamp) 2 , which was used in particular for the ALD of high performing p-type SnO by Kim et al 16 In contrast to the four-coordinate Sn(dmamp) 2 , Sn(O t Bu) 2 , which has previously been employed in the chemical vapour deposition of SnO, utilises simple non-chelating alkoxide ligands in an attempt to alter the reactivity and ALD behaviour of the complex.…”