Abstract:Chemical vapor deposition (CVD) and atomic layer deposition (ALD) are corner-stone techniques for depositing thin films in semi-conductor manufacturing. To deposit semiconductor grade materials, these techniques rely on high-performance precursors. This thesis covers synthesis, characterization, and evaluation of 1,3-dialkyltriazenides of group 11-14 metals as precursors for CVD and ALD.Triazenides had previously not been used as precursors for ALD, nor any other CVD process. The gallium and indium triazenides… Show more
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