Abstract:A novel snapback-free RC-LIGBT with integrated self-biased N-MOSFET is proposed and investigated by simulation. The device features an integrated self-biased N-MOSFET(ISM) on the anode active region. One side of the ISM is shorted to the P + anode electrode of RC-LIGBT and the other side is connected to the N + anode via a floating ohmic contact. The adaptively turn-on/off of the ISM contributes to improve the static and dynamic performance of the ISM RC-LIGBT. In the forward-state, due to the off-state of the… Show more
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