Smart Implant with Bacteria Monitoring and Killing Ability for Orthopedic Applications

Abstract

Bacterial infections around implants constitute a significant cause of implant failures. Early recognition of bacterial adhesion is an essential factor in preventing implant infections. Therefore, an implant capable of detecting and disinfecting initial bacterial adhesion is required. This study reports on the development of an intelligent solution for this issue. We developed an implant integrated with a biosensor electrode based on alternating current (AC) impedance technology to monitor the early growth process of Escherichia coli (E. coli) and its elimination. The biosensor electrode was fabricated by coating polypyrrole (PPy) doped with sodium p-toluenesulfonate (TSONa) on titanium (Ti) surfaces. Monitoring the change in resistance using electrochemical impedance spectroscopy (EIS), combined with an equivalent circuit model (ECM), enables the monitoring of the early adhesion of E. coli. The correlation with the classical optical density (OD) monitoring value reached 0.989. Subsequently, the eradication of bacteria on the electrode surface was achieved by applying different voltages to E. coli cultured on the electrode surface, which caused damage to E. coli. Furthermore, in vitro cellular experiments showed that the PPy coating has good biocompatibility and can promote bone differentiation.

Semiconductive Biomaterials for Pathological Bone Repair and Regeneration

“…Addition, Liang et al. [ 28 ] coated Ti surfaces with PPy doped with sodium p‐toluenesulfonate (TSONa), which was used to monitor the early adhesion of Escherichia coli and could be disrupted by applying different voltages to E. coli , thus eradicating the surface bacteria. Furthermore, in vitro cellular experiments had good biocompatibility and can promote bone differentiation.…”

Near‐Infrared Luminescent Materials Incorporating Rare Earth/Transition Metal Ions: From Materials to Applications

“…Intriguingly, they identified that the energy transfer process was facilitated between Cr 3+ –Cr 3+ and Ni 2+ –Ni 2+ ion pairs, as depicted in Figure a,b. In a parallel development, the MgGa 2 O 4 :Cr 3+ , Ni 2+ phosphor pioneered by Wang's [ 68 ] research group showcased potent short‐wave infrared luminescence in the 1000−1600 nm range. Its spectral bandwidth was a substantial 222 nm.…”

Awakening the Dumb Site to Realize Ultra‐Broadband NIR Phosphor

“…One method involves energy transfer from Cr 3+ to another NIR luminescence center, such as Yb 3+ and Ni 2+ . [ 16–24 ] For example, He et al. achieved a significant increase in the bandwidth, from 150 to 320 nm, by transferring energy from Cr 3+ to Yb 3+ .…”