Small-sized MMIC amplifiers using thin dielectric layers

Banba, S.; Ogawa, H.

doi:10.1109/22.372090

Cited by 32 publications

(15 citation statements)

References 13 publications

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“…It is well known, from the S-parameters of a balanced amplifier, that if the two amplifiers are identical, then the best return loss are achieved (S 11 = 0 and S 22 = 0) and therefore the return loss depend on the combiner/divider [13]. In this context several balanced amplifiers have been proposed in [14][15][16][17][18][19][20][21][22]. From Table 1, given in [14], it can be found that the maximum FBW of published balanced amplifiers is 97.9%.…”

Section: Implementation and Results Of A Balanced Amplifier By Using mentioning

confidence: 99%

A Wideband Quadrature Power Divider/Combiner and Its Application to an Improved Balanced Amplifier

Olvera‐Cervantes

Corona‐Chávez²,

Chávez‐Pérez³

et al. 2013

PIER C

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Abstract-In this paper, a novel broadband quadrature power divider and its robust design method are presented. The QPD consists of a two-section power divider in combination with a 90-degree differential phase shifter. The two-section power divider is calculated to provide equal power split, high output port isolation, and good return loss at all three ports. The differential phase shifter consists of a composed right/left handed transmission line and pure-right handed transmission line named CRLHu-TL and PRHd-TL, respectively. The CRLHu-TL is divided into two parts; one of them consists of a pure-left handed section whose parasitic pad effects are represented by means of a pure right handed section named PRHp. On the other hand, the PRHd-TL is composed by a microstrip transmission line of characteristic impedance 50 Ω and electrical length 50 • and two sections equivalents to PRHp. The proposed circuit is applied to develop a broadband balanced amplifier with measured fractional bandwidth (FBW) of 124.4% at the center frequency of 2 GHz.

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Section: Implementation and Results Of A Balanced Amplifier By Using mentioning

confidence: 99%

A Wideband Quadrature Power Divider/Combiner and Its Application to an Improved Balanced Amplifier

Olvera‐Cervantes

Corona‐Chávez²,

Chávez‐Pérez³

et al. 2013

PIER C

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“…Balanced amplifier which has advantages of effective power combining, flat gain, good input/output return loss, and good isolation between the two individual amplifiers is a popular topology of the amplifier in Imf-V family technologies at MMW frequency bands [4]- [6]. Although these GaAs balanced amplifiers had good power performances, the large chip size (> 2 mm2) due to the size of planar couplers increases the fabrication costs.…”

Section: Introductionmentioning

confidence: 99%

A 90-nm CMOS Broadband and Miniature Q-band Balanced Medium Power Amplifier

Jeng-Han

Lee

Huang

et al. 2007

2007 IEEE/MTT-S International Microwave Symposium

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This paper presents a Q-band balanced medium power amplifier fabricated using standard 90-nm 1P9M CMOS technology. The balanced amplifier, which is constructed with two broadband amplifiers and two broadside couplers using thinfilm microstrip (TFMS) line technique, has a compact chip size of 0.78 x 0.92 mm2. The MMIC demonstrates a measured gain of 14.5 dB at 48 GHz. With the feature of the balanced amplifier, the MMIC has a 3-dB bandwidth up to 37.2 % from 35 to 51 GHz with flat gain and return loss frequency response. Furthermore, the balanced amplifier delivers a saturation output power of 10.6 dBm with 8% PAE and OPldB is 7.5 dBm.Index Terms -Millimeter-wave (MMW), Q-band, CMOS, balanced amplifier, thin-film microstrip (TFMS), broad-side coupler.

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“…Three-dimensional (3-D) MMIC technology [4]- [7] has the potential to solve this problem. This is because 3-D MMIC's can provide passive circuits that are shielded from the effects of the lossy Si substrate.…”

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confidence: 99%

Wide-tuning range Si bipolar VCOs based on three-dimensional MMIC technology

Kamogawa

Nishikawa

Yamaguchi

et al. 1997

IEEE Trans. Microwave Theory Techn.

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The first completely integrated silicon (Si) bipolar junction transistor (BJT) voltage-controlled oscillators (VCO's), based on three-dimensional (3-D) monolithic-microwave integrated-circuit (MMIC) technology are presented in this paper. The 3-D MMIC technology offers the use of reactive matching in circuit design as well as GaAs MMIC construction and expands the operation frequency of Si MMIC's. Two types of VCO MMIC's using 0.5-m Si BJT's are presented and demonstrated.Both exhibit a very wide frequency tuning range in the 5-and 6-GHz bands. The former offers the frequency tuning range of 33% using the base-emitter conductance operation of the BJT, which works like a varistor with a large ratio. Furthermore, the oscillation frequency is remarkably linear against the controlled base bias. To confirm the widetuning ability of the proposed VCO at higher frequencies, a 7-GHz-band VCO is fabricated on the same Si masterslice array used for the 5-GHz-band VCO. It achieves a 28% tuning range from 5.53 to 7.09 GHz at the collector bias of 2 V. The latter, whose frequency is controlled by a varactor diode, also offers a wide tuning range from 5.15 to 6.75 GHz. The phase noise achieved ranges from 095 dBc/Hz to 0117 dBc/Hz at 1-MHz offset frequency over the tuning range of 1.6 GHz (best phase noise performance is 090.5 dBc/Hz at 100 kHz). Measured results show that 3-D MMIC Si VCO's can be developed that yield frequencies above 7 GHz.

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Small-sized MMIC amplifiers using thin dielectric layers

Cited by 32 publications

References 13 publications

A Wideband Quadrature Power Divider/Combiner and Its Application to an Improved Balanced Amplifier

A Wideband Quadrature Power Divider/Combiner and Its Application to an Improved Balanced Amplifier

A 90-nm CMOS Broadband and Miniature Q-band Balanced Medium Power Amplifier

Wide-tuning range Si bipolar VCOs based on three-dimensional MMIC technology

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