1997
DOI: 10.1109/22.643857
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Wide-tuning range Si bipolar VCOs based on three-dimensional MMIC technology

Abstract: The first completely integrated silicon (Si) bipolar junction transistor (BJT) voltage-controlled oscillators (VCO's), based on three-dimensional (3-D) monolithic-microwave integrated-circuit (MMIC) technology are presented in this paper. The 3-D MMIC technology offers the use of reactive matching in circuit design as well as GaAs MMIC construction and expands the operation frequency of Si MMIC's. Two types of VCO MMIC's using 0.5-m Si BJT's are presented and demonstrated.Both exhibit a very wide frequency tun… Show more

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Cited by 10 publications
(1 citation statement)
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“…For market applications, passive components with low loss and low parasitic capacitance has been becoming important to derive the highest performance from the devices. Si threedimensional (3D) MMlC technology [1]- [3] reported by the authors is an attractive solution to this issue. The aim of this paper is to carry out high-Q and high-resonant frequency monolithic inductors using Si 3D MMlC technology to realize LNA's, VCO's and PA's used at frequencies below the 5 GHz-band.…”
Section: Introductionmentioning
confidence: 99%
“…For market applications, passive components with low loss and low parasitic capacitance has been becoming important to derive the highest performance from the devices. Si threedimensional (3D) MMlC technology [1]- [3] reported by the authors is an attractive solution to this issue. The aim of this paper is to carry out high-Q and high-resonant frequency monolithic inductors using Si 3D MMlC technology to realize LNA's, VCO's and PA's used at frequencies below the 5 GHz-band.…”
Section: Introductionmentioning
confidence: 99%