Small signal modelling approach for submillimeter wave III–V HEMTs with analysation and optimization possibilities

Ohlrogge, Matthias; Tessmann, A.; Leuther, A.; Weber, Regina; Mabler, Hermann; Seelmann‐Eggebert, M.; Schlechtweg, M.; Ambacher, O.

doi:10.1109/mwsym.2016.7540043

Cited by 14 publications

(6 citation statements)

References 4 publications

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“…An extended K u-band LNA MMIC has been designed, which was processed in 100-nm mHEMT technology and all 50-nm mHEMT technology variations using the cryogenic model described in [26] and [27]. A K u-band LNA in 35-nm technology has not been processed since the presence of the increased leakage current is expected to degrade the noise performance especially in the target band.…”

Section: Cryogenic Lna Mmic Designmentioning

confidence: 99%

A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

Heinz

Thome

Leuther

et al. 2021

IEEE Trans. Microwave Theory Techn.

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This article reports on the investigation and optimization of cryogenic noise mechanisms in InGaAs metamorphic high-electron-mobility transistors (mHEMTs). HEMT technologies with a gate length of 100, 50, and 35 nm are characterized both under room temperature and cryogenic conditions. Furthermore, two additional technology variations with 50-nm gate length are investigated to decompose different noise mechanisms in HEMTs. Therefore, cryogenic extended K u-band low-noise amplifiers of the investigated technologies are presented to benchmark their noise performance. Technology C with a 50-nm gate length exhibits an average effective noise temperature of 4.2 K between 8 and 18 GHz with a minimum of 3.3 K when the amplifier is cooled to 10 K. The amplifier provides an average gain of 39.4 dB at optimal noise bias. The improved noise performance has been achieved by optimization of the epitaxial structure of the 50-nm technology, which leads to low gate leakage currents and high gain at low drain current bias. To the best of the authors' knowledge, this is the first time that an average noise temperature of 4.2 K has been demonstrated in the K u-band.

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Section: Cryogenic Lna Mmic Designmentioning

confidence: 99%

A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

Heinz

Thome

Leuther

et al. 2021

IEEE Trans. Microwave Theory Techn.

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“…The intrinsic transistor parameters of the models used in this work are based on on-wafer measurement data up to 110 GHz, and have been verified up to 330 GHz in coplanar-wiring environment [28]. To describe the transistors with TFMSL wiring depicted in Fig.…”

Section: A Measurement Resultsmentioning

confidence: 99%

670-GHz Cascode Circuits Based on InGaAs Metamorphic High-Electron-Mobility Transistors

John

Tessmann

Leuther

et al. 2022

IEEE Trans. THz Sci. Technol.

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This article reports on the development of high-gain cascode amplifier circuits in the frequency range around 670 GHz. The cascode circuits are based on a 35-nm metamorphic high-electron-mobility transistor (mHEMT) technology. Up to date, only common-source transistors have been used in HEMT-based amplifier circuits above 600 GHz. For this reason, prospects and design considerations of cascode devices operating at this THz frequency band are evaluated. The design and implementation of high-gain six-stage cascode amplifier circuits is described, achieving up to 30 dB of measured gain at 670 GHz and a small-signal gain of at least 25 dB over the frequency range from 630 to 690 GHz. The gain benefit of cascode devices is demonstrated with up to 5 dB of gain per cascode stage at 670 GHz. This corresponds to the highest reported gain per stage for HEMT-based WR-1.5 circuits.

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“…The intrinsic properties of the utilized two-finger mHEMTs are implemented via a polynomial-based model, set-up in Keysight's Advanced Design System (ADS) schematic environment, with the corresponding data extracted from on-wafer measurements [19]. Initially, this model contains a preliminary extrinsic-shell approximation via analytically fit ADS components, validated only up to 300 GHz.…”

Section: Power Amplifier Designmentioning

confidence: 99%

Broadband 400-GHz InGaAs mHEMT Transmitter and Receiver S-MMICs

Gashi

John

Meier

et al. 2021

IEEE Trans. THz Sci. Technol.

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The modeling, design and experimental evaluation of both a 400-GHz transmitter and receiver submillimeter-wave monolithic integrated circuit (S-MMIC) is presented in this paper. These S-MMICs are intended for a radar-based system in the aforementioned operating frequency. The transmitter occupies a total chip area of 750 × 2750 µm 2 . It consists of a multiplier-by-four, generating the fourth-harmonic of the WR-10 input signal, which drives the integrated WR-2.2 power amplifier. The latter has an output-gate width of 128 µm. The receiver S-MMIC, 750 × 2750 µm 2 , consists of a multiplier-by-two, providing the second harmonic of the WR-10 input signal for the local-oscillator port of the subsequent integrated sub-harmonic mixer. The radio-frequency port of the latter, connects via a Lange coupler to a WR-2.2 low-noise amplifier (LNA). All the components included, are processed on a 35-nm InAlAs/InGaAs metamorphic high-electron-mobility transistor integrated-circuit technology, utilizing two-finger transistors and thin-film microstrip lines (TFMSLs). The modeling approach of the amplifier cores and the respective design decisions taken are listed and elaborated-on in this work. Accompanying measurements and simulations of the transmitter and receiver are presented. The individual components of the aforementioned S-MMICs, are characterized and the results are included in the paper. The state-of-the-art, for S-MMIC based circuits operating in the WR-2.2 band, is set by the LNA, on one side, spanning an operational 3-dB bandwidth (BW) of 310 to 475 GHz, with a peak gain of 23 dB and, on the other side, by the final transmitter design, which covers an operating range of 335 to 425 GHz with a peak-output power of 9.0 dBm and accompanying transducer gain of 11 dB. The included transmitterand receiver-designs represent a first-time implementation in the mentioned technological process, utilizing solely TFMSLs, boasting the integration level, operating in the WR-2.2 frequency band, and setting the state of the art-to the authors' best knowledge-for all S-MMIC based solutions in the respective frequency band, in terms of output power and gain over the operating 3-dB BW.

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Small signal modelling approach for submillimeter wave III–V HEMTs with analysation and optimization possibilities

Cited by 14 publications

References 4 publications

A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

670-GHz Cascode Circuits Based on InGaAs Metamorphic High-Electron-Mobility Transistors

Broadband 400-GHz InGaAs mHEMT Transmitter and Receiver S-MMICs

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