Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method

Abstract

A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor (HEMT) switch. The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range. The percentage errors E i j within 3.83% show the great agreement between the simulated S-parameters and the measured data.

A new extraction flow of the s mall‐signal s witch‐HEMT model based on the parasitic resistance scanning algorithm

“…The first point shows the iteration where R s and R d compensate for the on-state channel resistance. However, it is known that switch-HEMT should have a finite R ds on : 20,23 That is probably why G ds off is still negative at this point, and the summary error metric is quite large. Decreasing the parasitic resistances further leads to the point where G ds off becomes positive.…”

“…[15][16][17][18] However, switch-HEMT modeling remains challenging as only a few works studied its pitfalls. [19][20][21][22][23][24][25][26] In practice, switch-HEMTs usually operate in the common-gate (CG) configuration. A large-valued resistor is connected to the gate of the switch-HEMT to prevent RF leakage to the bias circuitry.…”

“…Several papers addressed the switch-HEMT modeling challenge by neglecting or incorporating the large gate resistor into the intrinsic equivalent circuit equations. 19,20 In the work by Giofre et al, 21 an electromagnetic (EM) based approach similar to commonsource (CS) modeling and cascode modeling, initially proposed by Resca et al, [27][28][29][30] was suggested. Several EMsimulations were applied to derive the small-signal behavior of the CG switch-HEMT using the measured S-parameters of the CS device as the model core.…”

“…Lots of models were proposed for common‐source devices manufactured by various process technologies 15–18 . However, switch‐HEMT modeling remains challenging as only a few works studied its pitfalls 19–26 …”

“…A large‐valued resistor is connected to the gate of the switch‐HEMT to prevent RF leakage to the bias circuitry. Several papers addressed the switch‐HEMT modeling challenge by neglecting or incorporating the large gate resistor into the intrinsic equivalent circuit equations 19,20 . In the work by Giofre et al, 21 an electromagnetic (EM) based approach similar to common‐source (CS) modeling and cascode modeling, initially proposed by Resca et al, 27–30 was suggested.…”