Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch

Luo, Ling; Liu, Jun; Wang, Guofang; Wu, Yuxing

doi:10.1088/1674-4926/41/3/032102

Cited by 8 publications

(10 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Using the presented parameter extraction method, the model simulated results with measured data show excellent agreement with the measurements up to 10.1 GHz in Figure 6. To better illustrate the effectiveness of the extracted small signal model parameter extraction method and the fitting accuracy of the new model under Bias 1, Bias 2 and Bias 3, the relative error formula 33 is introduced to evaluate it.

e = \frac{|S_{simu} (i) - S_{meas} (i)|}{\sqrt{\frac{\sum_{n} {[S_{meas} (i)]}^{2}}{n}}} i = 1, 2 \dots n,

where e is the relative error; S simu ( i ) is the i th simulation data; S meas ( i ) is the i th measurement data; and n represent number of data point in the frequency range of 0.6–10.1 GHz. Table 2 shows the results of the evaluation of the relative errors of the S ‐parameters obtained from the measurements and simulations of the model.…”

Section: Model Verificationmentioning

confidence: 99%

An accurate parameter extraction method for small signal model of CNFET

Wang

Chen

et al. 2021

Int J Numerical Modelling

Self Cite

View full text Add to dashboard Cite

A new small‐signal model for carbon nanotube field effect transistor (CNFET) is proposed which incorporates the effect of metallic carbon nanotubes (m‐CNTs). The effect of m‐CNTs is comprehensively modeled by contact resistance between m‐CNTs and source/drain (S/D), which also taken into account a parallel RC circuit composed of Cmts, Cmtd, and non‐linear resistance Rdsm. An analytical method is presented to extract model parameters. The model is validated using multi‐tube (MT) CNFET with eight gate fingers of 400 nm length and 50 μm width each manufactured in a 700 nm technology. Excellent agreement is achieved between measured and simulated S‐parameters in the range over 0.6–10.1 GHz.

show abstract

e = \frac{|S_{simu} (i) - S_{meas} (i)|}{\sqrt{\frac{\sum_{n} {[S_{meas} (i)]}^{2}}{n}}} i = 1, 2 \dots n,

Section: Model Verificationmentioning

confidence: 99%

An accurate parameter extraction method for small signal model of CNFET

Wang

Chen

et al. 2021

Int J Numerical Modelling

Self Cite

View full text Add to dashboard Cite

show abstract

“…[15][16][17][18] However, switch-HEMT modeling remains challenging as only a few works studied its pitfalls. [19][20][21][22][23][24][25][26] In practice, switch-HEMTs usually operate in the common-gate (CG) configuration. A large-valued resistor is connected to the gate of the switch-HEMT to prevent RF leakage to the bias circuitry.…”

Section: Introductionmentioning

confidence: 99%

“…Several papers addressed the switch-HEMT modeling challenge by neglecting or incorporating the large gate resistor into the intrinsic equivalent circuit equations. 19,20 In the work by Giofre et al, 21 an electromagnetic (EM) based approach similar to commonsource (CS) modeling and cascode modeling, initially proposed by Resca et al, [27][28][29][30] was suggested. Several EMsimulations were applied to derive the small-signal behavior of the CG switch-HEMT using the measured S-parameters of the CS device as the model core.…”

Section: Introductionmentioning

confidence: 99%

“…Lots of models were proposed for common‐source devices manufactured by various process technologies 15–18 . However, switch‐HEMT modeling remains challenging as only a few works studied its pitfalls 19–26 …”

Section: Introductionmentioning

confidence: 99%

“…A large‐valued resistor is connected to the gate of the switch‐HEMT to prevent RF leakage to the bias circuitry. Several papers addressed the switch‐HEMT modeling challenge by neglecting or incorporating the large gate resistor into the intrinsic equivalent circuit equations 19,20 . In the work by Giofre et al, 21 an electromagnetic (EM) based approach similar to common‐source (CS) modeling and cascode modeling, initially proposed by Resca et al, 27–30 was suggested.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A new extraction flow of the s mall‐signal s witch‐HEMT model based on the parasitic resistance scanning algorithm

Popov

Добуш

Salnikov

2022

Int J RF Mic Comp-Aid Eng

View full text Add to dashboard Cite

Recent research interest in switch High Electron Mobility Transistor (HEMT) modeling revealed the special modeling requirement that is a parasitic capacitance shell surrounding the equivalent circuit. Despite the robust determination of parasitic capacitances, one still may face several problems when extracting a small-signal switch-HEMT model. Practical switch-HEMT test structures include different configurations of gate network with additional microstrip lines, large-value resistors, and via-holes. Ignoring parts of these networks results in unfavorable errors when comparing measured and simulated results. Another problem may arise when extracting the switch-HEMT equivalent circuit parameters from the measured S-parameters of the grounded gate test structures: obtained parasitic resistances can be exaggerated, resulting in negative values of intrinsic channel resistance (conductance). This paper presents a new switch-HEMT extraction flow intended to address the mentioned challenges. To eliminate an excessive gate inductance attributed to via-hole, we introduce a concept of the gate network de-embedding. A negative channel resistance (conductance) problem is handled by applying a new parasitic resistance scanning algorithm that allows finding the model parameter vector with reasonable positive values in the vicinity of the Sparameters modeling error minimum. Accurate S-parameters modeling results verify the proposed extraction flow. Obtained small-signal switch-HEMT models are validated by designing and manufacturing a 2 dB digital step attenuator section.

show abstract

A complete small‐signal model of GaAs dual‐gate HEMT

Huang

Chen

2022

Int J Numerical Modelling

Self Cite

View full text Add to dashboard Cite

A complete small‐signal model of dual‐gate HEMT is proposed, considering the parasitic element effects. To extract the intrinsic elements accurately, the parasitic elements are eliminated by using a new method in this paper. It is realized by constructing two simple three‐port matrices and eliminating them with the features of π‐type and T‐type networks. This method is fast and accurate. Dual‐gate HEMTs could be regarded as a cascode connection of two single‐gate HMETs. A dual‐gate HEMT is fabricated on a commercial 0.25 μm GaAs technology to verify the proposed the extraction method. The result shows a good agreement between measured and simulated data over a wide frequency range.

show abstract

Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch

Cited by 8 publications

References 16 publications

An accurate parameter extraction method for small signal model of CNFET

An accurate parameter extraction method for small signal model of CNFET

A new extraction flow of the s mall‐signal s witch‐HEMT model based on the parasitic resistance scanning algorithm

A complete small‐signal model of GaAs dual‐gate HEMT

Contact Info

Product

Resources

About