An accurate parameter extraction method for small signal model of CNFET

Abstract

A new small‐signal model for carbon nanotube field effect transistor (CNFET) is proposed which incorporates the effect of metallic carbon nanotubes (m‐CNTs). The effect of m‐CNTs is comprehensively modeled by contact resistance between m‐CNTs and source/drain (S/D), which also taken into account a parallel RC circuit composed of Cmts, Cmtd, and non‐linear resistance Rdsm. An analytical method is presented to extract model parameters. The model is validated using multi‐tube (MT) CNFET with eight gate fingers of 400 nm length and 50 μm width each manufactured in a 700 nm technology. Excellent agreement is achieved between measured and simulated S‐parameters in the range over 0.6–10.1 GHz.

A novel small-signal equivalent circuit model for GaN HEMTs incorporating a dual-field-plate

“…The extraction procedure of the proposed model and the classic model is performed by the Keysight IC-CAP device modeling software. The analytical initial values are refined using the random optimization algorithm implemented in Keysight IC-CAP device modeling software to further enhance the accuracy of the fitting [25] . The initial and optimized values of the proposed and classical models with bias-independent and bias-dependent parameters are given in Table 1.…”