Small-signal gain performance of the permeable base transistor at EHF

Actis, R.; Chick, R. W.; Hollis, M.A.; Clifton, B. J.; Nichols, K. B.; Bozler, C.O.

doi:10.1109/edl.1987.26554

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Cited by 8 publications

(2 citation statements)

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“…This device, however, showed a low peak-to-valley ratio of 1.1. It is noteworthy that these values compare favorably with the values obtain from the previously reported PBTs mS/mm) [9]. The gate current is shown in Fig.…”

Section: I-v Characteristicssupporting

confidence: 79%

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Resonant Tunneling Permeable Base Transistors With High Transconductance

Lind

Lindstrom

Wernersson

2004

IEEE Electron Device Lett.

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A GaAs-based resonant tunneling permeable base transistor has been developed and evaluated at room temperature. The transistor is fabricated by overgrowing a tungsten gate placed next to an AlGaAs-GaAs-InGaAs resonant tunneling heterostructure. By changing the gate voltage, the effective conducting area of the tunnel diode can be modulated and the collector-emitter current thus controlled. Peak currents above 300 mA/mm and a maximum transconductance of 270 mS/mm have been obtained.Index Terms-Gallium arsenide (GaAs), permeable base transistors, resonant tunneling transistors, tungsten.

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Section: I-v Characteristicssupporting

confidence: 79%

“…The total gate capacitance was further measured to be around 1 pF/mm, which yields a transition frequency C) of roughly 40 GHz for the 272 mS/mm device, which is comparable to earlier PBT data [9]. can be increased by minimizing the gate capacitance and by using a DBH with a higher peak current density.…”

Section: I-v Characteristicsmentioning

confidence: 73%