Small-signal characterization and modelling of 55nm SiGe BiCMOS HBT up to 325GHz

Deng, Mingke; Quémerais, Thomas; Bouvot, Simon; Gloria, D.; Chevalier, P.; Lepilliet, S.; Danneville, F.; Dambrine, G.

doi:10.1016/j.sse.2016.11.012

Cited by 16 publications

(12 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Calibration has been carried out with impedance standard substrate (ISS) and the calibration methods used were LRRM (line-reflect-reflectmatch) and TRL (Thru, Reflect, Line). In [14], Deng et al have presented an exhaustive set of S parameter measurements up to 325 GHz on HBTs from an advanced 55nm BiCMOS technology using a similar approach as [13] for calibration (LRRM on ISS ). Finally, Williams et al [15] have presented measurement results from an silicon on insulator (SOI) technology, where passive elements have been characterized up to 500 GHz, while the transistor measurement was performed up to 110 GHz.…”

mentioning

confidence: 99%

On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands

Fregonèse

Matos

Deng

et al. 2018

IEEE Trans. Microwave Theory Techn.

Self Cite

View full text Add to dashboard Cite

This paper investigates on-wafer characterization of SiGe HBTs up to 500 GHz. Test structures for on-wafer TRL calibration have been designed and are presented. The TRL calibration method with silicon standards has first been benchmarked through EM-simulation. Passive and active components are then characterized up to 500 GHz. The slight discontinuities between the frequency bands are explored. A specific focus was placed on incorrect horizontal probe positioning as well as on probe deformation, resulting in a better assessment of possible measurement errors.

show abstract

mentioning

confidence: 99%

On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands

Fregonèse

Matos

Deng

et al. 2018

IEEE Trans. Microwave Theory Techn.

Self Cite

View full text Add to dashboard Cite

show abstract

“…In [8], the calibration has been carried out with impedance standard substrate (ISS) and the calibration methods used were LRRM (line-reflect-reflect-match) and TRL (Thru, Reflect, Line). In [9], Deng et al have presented an exhaustive set of S-parameter measurements up to 325 GHz on HBTs from an advanced 55nm BiCMOS technology using calibration approach (LRRM on ISS) similar to [8]. Unfortunately, measurements in [8], [9] were not benchmarked with EM simulation.…”

Section: Calibration and De-embedding Methodsmentioning

confidence: 99%

“…In [9], Deng et al have presented an exhaustive set of S-parameter measurements up to 325 GHz on HBTs from an advanced 55nm BiCMOS technology using calibration approach (LRRM on ISS) similar to [8]. Unfortunately, measurements in [8], [9] were not benchmarked with EM simulation. The report presented by Williams et al in [5] clearly shows the limitations of off-wafer calibration methods by comparing them with the on-wafer TRL method.…”

Section: Calibration and De-embedding Methodsmentioning

confidence: 99%

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

Fregonèse

Deng

Cabbia

et al. 2020

IEEE J. Electron Devices Soc.

Self Cite

View full text Add to dashboard Cite

This paper presents a state-of-art review of on-wafer S-parameter characterization of THz silicon transistors for compact modelling purpose. After, a brief review of calibration/de-embedding techniques, the paper focuses on the onwafer calibration techniques and especially on the design and dimensions of lines built on advanced silicon technologies. Other information such as the pad geometry, the ground plane and the floorplan of the devices under test are also compared. The influence of RF probe geometry on the coupling with the substrate and adjacent structures is also considered to evaluate the accuracy of the measurement, especially using EM simulation methodology. Finally, the importance of measuring above 110 GHz is demonstrated for SiGe HBT parameter extraction. The validation of the compact model is confirmed thanks to an EM-spice cosimulation that integrates the whole calibration cum deembedding procedure.

show abstract

“…In order to research and develop the application of millimeter wave devices in the commercial world, accurate on-wafer measurement is a key requirement since it eliminates the additional errors and uncertainties introduced by the device package [1][2][3]. For this purpose, careful on-wafer calibrations must be employed to eliminate the systematic errors typically caused by system directivity, loss/delay of measurement paths, or the mismatch of measurement ports.…”

Section: Introductionmentioning

confidence: 99%

Realization of Accurate Load Impedance Characterization for On-Wafer TRM Calibration

Wang

et al. 2021

Front. Phys.

View full text Add to dashboard Cite

In this paper, the uncertainty and the impact of imperfect load calibration standard for on-wafer Through-Reflect-Match calibration method are analyzed with the help of 3D electromagnetic simulations. Based on the finding that load impedance can lead to significant errors in calibration, an automatic algorithm to determine the complex impedance of the load standard is proposed. This method evaluates the resistance as well as the parasitic inductance introduced by the misalignment of the probe tip to the substrate pad at mm-wave frequencies or the non-precize load standard. The proposed algorithm was verified by practical measurement, and the results show that by incorporating actual load impedance into the calibration algorithm, the deviations of RF measurement results are greatly suppressed.

show abstract

Small-signal characterization and modelling of 55nm SiGe BiCMOS HBT up to 325GHz

Cited by 16 publications

References 9 publications

On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands

On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

Realization of Accurate Load Impedance Characterization for On-Wafer TRM Calibration

Contact Info

Product

Resources

About