Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors

Зебрев, Г. И.; Tselykovskiy, A. A.; Batmanova, Daria K.; Melnik, E. V.

doi:10.1109/ted.2013.2257793

Cited by 33 publications

(27 citation statements)

References 23 publications

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“…The intrinsic output conductance g ds,int at that bias extracted by the S ‐parameters is 16 mS. In theory, the extrinsic output transconductance g ds,ext can be written as, thus we get the g ds,ext 11.4 mS. Therefore, the above analysis indicates the g ds extracted by RF measurement is accordant with that extracted from DC measurement, which indirectly proves that the approach of parameter extraction is feasible in our work.…”

Section: Resultssupporting

confidence: 77%

Extracting Small‐Signal Model Parameters of Graphene‐Based Field‐Effect Transistors

Wang

Miao

Peng

et al. 2018

Physica Status Solidi (a)

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This paper is aimed at extracting the intrinsic and extrinsic model parameter values of a small signal model based only on S‐parameter measurements. An analytically derived method to extract parasitic resistances and then obtain the all intrinsic parameters according to the previous method are proposed. Experiment results show the extracted model parameters can fit the test data well for our device, which illustrate the validity and accuracy of the extraction method. In addition, the authors analyze the huge differences of small‐signal parameters between graphene‐based field‐effect transistors (FETs) and traditional MOSFETs in saturation, and then point out the specific direction of improving the radio frequency performance of graphene‐based field‐effect transistors.

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Section: Resultssupporting

confidence: 77%

Extracting Small‐Signal Model Parameters of Graphene‐Based Field‐Effect Transistors

Wang

Miao

Peng

et al. 2018

Physica Status Solidi (a)

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“…A self-consistent calculation of chemical doping effects requires an exact quantitative characterization of charge density and the Fermi energy in graphene. We will rely on this section on the analytical results reported in [6,7,8].…”

Section: Graphene Charge Densities and Fermi Energy As Function Of Gamentioning

confidence: 99%

Impact of Extrinsic Interface Traps and Doping Atoms on Conductivity of Graphene Field Effect Devices

Зебрев

Shostachenko

2019

IOP Conf. Ser.: Mater. Sci. Eng.

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Near-interfacial oxide traps and chemical impurities on the graphene surface or at the graphene-dielectric interface can be a source of intentional or unintentional doping of graphene sheet. The efficiency of such chemical doping can vary in a wide range depending on parameters of graphene field effect devices. Mechanisms of such sensitivity of doping efficiency to the device characteristics need to be understood. The objective of this paper is to theoretically derive the analytical relations, adapted to the explicit calculation of graphene chemical doping.

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“…This model is equivalent to the small-signal capacitance from others. 29 Because of the thick oxide we use, C Graphene ) C it ; C oxide . Thus, the equivalent capacitance is just that of the oxide capacitance.…”

Section: Appendix B: Capacitance Modelmentioning

confidence: 99%

Disorder density of states in supported graphene

Sinha

Lee

2014

Journal of Applied Physics

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Transport in graphene is impacted by disorder. Disorder, which can occur on supported graphene, manifests as a significant shift in the Fermi level position from the charge neutrality point (Dirac point) and leads to carrier scattering. Here, we provide a direct measurement of the disorder density of states (DOS). We show that the disorder is extrinsic to graphene and is characterized by a continuum of DOS located at the graphene-substrate interface. A key feature is a Gaussian-like DOS that causes pinning of the Fermi level and the shift in the Dirac point. V C 2014 AIP Publishing LLC. [http://dx

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Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors

Cited by 33 publications

References 23 publications

Extracting Small‐Signal Model Parameters of Graphene‐Based Field‐Effect Transistors

Extracting Small‐Signal Model Parameters of Graphene‐Based Field‐Effect Transistors

Impact of Extrinsic Interface Traps and Doping Atoms on Conductivity of Graphene Field Effect Devices

Disorder density of states in supported graphene

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