Small- and Large-Signal Performance of III-Nitride RF Switches With Hybrid Fast/Slow Gate Design

Sattu, A.; Yang, Jinwei; Gaška, R.; Khan, Bilal; Shur, M. S.; Simin, Grigory

doi:10.1109/lmwc.2011.2138686

Cited by 7 publications

(8 citation statements)

References 9 publications

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“…In HFETs, when the gate bias is below the threshold voltage, the 2D channel remains undepleted in the gate-source and gate-drain regions. Figure 4 (after [6]) shows the HFET equivalent capacitances and the locations of the 2Dchannel regions. As seen, the C OFF includes three main components: gate -2D channel partial capacitances C GS , C GD and the inter-electrode capacitance C DS .…”

Section: Lcl Design Principles For Microwave Devicesmentioning

confidence: 99%

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Static and transient characteristics of GaN power HFETs with low‐conducting coating

Gaevski

Deng

Dobrinsky

et al. 2014

Phys. Status Solidi C

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We report on a design of GaN based HFET with a low‐conducting layer (LCL) coating. The LCL coating dramatically improves the electric field uniformity and increases the breakdown voltage. A major advantage is consistent control of the breakdown characteristics, which is expected to dramatically improve yield and reliability. Initial experimental studies demonstrated a three‐fold increase in the breakdown voltage compared with conventional HFETs. The LCL also leads to a much more uniform underlying channel depletion evidenced by a significantly lower HFET channel capacitance in the off state for the HFET based RF switches. This results in a lower loss and higher isolation. Another advantage is a faster transient enabled by LCL, which should improve efficiency and reduce loss for power HFET switches.(© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Lcl Design Principles For Microwave Devicesmentioning

confidence: 99%

“…Insertion loss and isolation as a function of frequency for conventional HFET and LCL based HFET ©IEEE 2011 (after[6]). …”

mentioning

confidence: 99%

Static and transient characteristics of GaN power HFETs with low‐conducting coating

Gaevski

Deng

Dobrinsky

et al. 2014

Phys. Status Solidi C

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“…Qualitative surface potential profiles in conventional (black line) and LCL (red line) HFETs. [3,4] Figure 10 schematically shows how the LCL concept was applied to microwave switches resulting in reduced parasitic gate-to-source and gate-to-drain capacitances in the off state and, therefore, enabling a higher isolation in the off-state and low losses in the on state [5]. The key design parameter is the RC time constant of the LCL.…”

Section: Low Conducting Layer (Lcl) Passivation For Microwave Devicesmentioning

confidence: 99%

“…

We report on several key innovations to enable high performance/high reliability of nitride based FETs that include (1) the use of Perforated Channel (PC) design; (2) surface application of Low Conducting Layers (LCLs); (3) the combination of these two approaches (for achieving the ultimate power performance at the highest switching frequencies with minimum losses); (4) novel device geometries (combining the best features of lateral and vertical devices for normally-off transistors); (5) improved control of self-heating and better heat dissipation. We also review our recent results exploring the PC channel and LCL designs [1][2][3][4][5][6]. Experimental and simulation results reported in [1-6] demonstrated a sharp increase in the breakdown voltage, a large enhancement of the cutoff frequency, a better device stability and smaller spreading of the device parameters for higher yield, improved manufacturability, and smaller self-heating due to a lower thermal impedance.

…”

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confidence: 99%

New Approaches to Realizing High Power Nitride Based Field Effect Transistors

2014

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We report on several key innovations to enable high performance/high reliability of nitride based FETs that include (1) the use of Perforated Channel (PC) design; (2) surface application of Low Conducting Layers (LCLs); (3) the combination of these two approaches (for achieving the ultimate power performance at the highest switching frequencies with minimum losses); (4) novel device geometries (combining the best features of lateral and vertical devices for normally-off transistors); (5) improved control of self-heating and better heat dissipation. We also review our recent results exploring the PC channel and LCL designs . Our experimental and simulation results demonstrated a sharp increase in the breakdown voltage, a large enhancement of the cutoff frequency, a better device stability and smaller spreading of the device parameters for higher yield, improved manufacturability, and smaller self-heating due to a lower thermal impedance.

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“…One path will typically be enabled with a high voltage, while the other is enabled with a low voltage. The most important parameters to consider when selecting an SPDT are the return loss on each port, the insertion loss from the input to each of the output ports and the isolation between the output ports [26].…”

Section: Switchesmentioning

confidence: 99%

Adaptable Electrically Steerable Antenna Array with Diverse Switchable Polarization

Labossiere¹

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Adaptability is essential for antenna systems, especially those operating in harsh or unpredictable environments. Adaptable electrically steerable antennas (AESA) provide this flexibility. AESA use in radar systems is expanding due to new technologies that enable higher power and more miniaturized implementations. Polarization diversity is another way of adding adaptability to radar systems.System-level analysis of a typical radar system was performed to determine the specifications for a series of 4x4 switchable polarization AESA arrays meant to operate from 9.4 to 9.5 GHz. These arrays were designed on a multilayer Rogers Duroid PCB.Sub-components such as a microstrip feeding network, patch antennas, switches and hybrid couplers were integrated on the same PCB utilizing both sides of the board.Simple 4x4 linear and 4x4 circular polarized arrays were designed and fabricated on this chosen package. These single-polarization arrays were compacted into a single lowprofile PCB that measures 2.5x2.5 inches. The measurements of both single-polarization arrays closely matched the simulated results, which helped correct issues with the design process before adding more polarization states. Measurements show that these modularly scalable 2.5x2.5-inch PCBs can achieve a gain of between 12 and 21 dB depending on how many boards are tiled together.A technique for increasing the bandwidth of a single patch antenna through resistive loading was also explored. Using commercially packaged resistors to load a single patch resulted in a bandwidth increase of 400 MHz.Once simple single-polarization arrays were verified, two switchable polarization arrays, one linear and one circular, were designed and simulated. These switchable

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Small- and Large-Signal Performance of III-Nitride RF Switches With Hybrid Fast/Slow Gate Design

Cited by 7 publications

References 9 publications

Static and transient characteristics of GaN power HFETs with low‐conducting coating

Static and transient characteristics of GaN power HFETs with low‐conducting coating

New Approaches to Realizing High Power Nitride Based Field Effect Transistors

Adaptable Electrically Steerable Antenna Array with Diverse Switchable Polarization

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