Abstract:We report on several key innovations to enable high performance/high reliability of nitride based FETs that include (1) the use of Perforated Channel (PC) design; (2) surface application of Low Conducting Layers (LCLs); (3) the combination of these two approaches (for achieving the ultimate power performance at the highest switching frequencies with minimum losses); (4) novel device geometries (combining the best features of lateral and vertical devices for normally-off transistors); (5) improved control of se… Show more
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