Slowly Propagating high‐Field Domains in Semiconductors with Negative Differential Conductivity

Kroll, Kathleen

doi:10.1002/pssb.19670240232

Cited by 7 publications

(3 citation statements)

References 14 publications

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“…Before doing this, it is more convenient to introduce dimensionless quantities into Equs. (12) aud (13). Let is --js/9oVao; wherevao = (v~o + rov2o ) 9 (l+ro)-~ is the average electron drift velocity in the band.…”

Section: General Case: Two-state Modelmentioning

confidence: 99%

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Effect of traps on steadily travelling domains in semiconductors

Pataki

1969

Acta Physica

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This paper deals with the effect of traps on the domain velocity (u0) and total current ()s) in the presenee of steadily travelling high field domains. The treatment is applieable both for the Watkins--Gunn effect and recombination instability. The calculations are earried out without linearization of the related equations, using the method proposed in [9] for the trapfree case. The assumptions used are: (i) Only transitions leading to negative differential conductivity depend on the electrie fie]d; (ii) The relaxation times of transitions between high and low mobility states ate shorter than the other characteristic times of the problem; (iii) The mobilities and diffusion coefficients are field independent; (iv) The electron concentration in the band is much lower than those of empty and filled centres.The effect of traps on the Watkins --Gunn effeet is discussed in detail and expressions for possible domain-velocity are derived. In contrast to the trap-free case the domain velocity is sensitive to the domain shape. For quadratic domains, the peak field dependente of possible domain modes is discussed.A simple analysis shows that the applicability of the model for slowly moving domains in semi-insulating GaAs cannot be definitely deeided without a knowledge of the relaxation time from low-mobility states to the traps.

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Section: General Case: Two-state Modelmentioning

confidence: 99%

“…Therefore, one has to assume a eonerete domain shape. Aecording to [13] and [14], the domain may be symmetrical. Assuming a.quadratic domain shape ~~ = ~3 = ~4 = 0, while the term containing the parameter ~~ can be neglected.…”

Section: ~ 1 --Zr 2 -~4-4-rot~l~m~s~io(~-}-ormentioning

confidence: 99%

Effect of traps on steadily travelling domains in semiconductors

Pataki

1969

Acta Physica

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“…Because of mathematical difficulties a simplified reaction kinetic model is used, similarly to the one proposed by Kagan,Kalashnikov,and others [6,21,29] for the description of high-field domains in Ge:Au, which, in principle, can explain negative differential conductivity with a field-dependent density of conduction electrons. This model consists of an n-type semiconductor containing shallow donors2) (concentration N,) being almost compensated by acceptors (N,) which can capturc a second electron.…”

Section: The Reaction Kinetic Modelmentioning

confidence: 99%

Critical Conditions for Transitions between Stationary and Non‐Stationary High‐Field Domains in Semi‐Insulators

Döhler

1968

Physica Status Solidi (b)

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An analysis of a fluctuation in the neighborhood of singular points of the Poisson and transport equations for a semi-insulator with negative differential conductivity due to field enhanced recombination yields a criterion for the transitions between stationary and non-stationary high-field domains. Critical voltages (domain lengths) and current oscillation frequencies are given for different saturation currents and agree well with experimental results reported for field-quenched CdS. It has been shown that, with increasing applied voltage, alternating regimes of stationary and nonktationary solutions exist for the model discussed, in agreement with recently reported experimental indications.Die Analyse einer Fluktuation in der Niihe der singuliren Punkte der Poisson-und Transportgleichung fur einen Halbleiter mit negativer differentieller Leitfiihigkeit, die auf feldangeregte Rekombination zuruckzufiihren ist, ergibt ein Kriterium fiir die ubergiinge zwischen stationiiren und nicht-stationiiren Hochfelddomiinen. Fur bestimmte Siittigungsstrome egeben sich bestimmte kritische Spannungen (Domiinenllingen) und Frequenzen der Stromoszillationen, die gut mit den an CdS-Kristallen mit Feldtilgung enielten experimentellen Ergebnissen iibereinstimmen. Es kann gezeigt werden, daD fiir das diskutierte Model1 bei Erhohung der angelegten Spannung abwechselnd Gebiete mit stationiiren und nicht stationiiren Losungen auftreten, in tfbereinstimmung mit Experimenten, fiber die kurzlich berichtet wurde.

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Transition between Stationary and Moving High‐Field Domains in CdS in a Range of N‐Shaped Negative Differential Conductivity due to Field‐Quenching

Böer

Voss

1968

Physica Status Solidi (b)

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In CdS, unstable moving domains are observed, which exist in a current-voltage range between the range for stationary electrode-adjacent domains and the range for transitions to undeformed moving domains. These current -voltage ranges have been investigated in the same crystal by changing the electron concentration a t the boundary of a pseudocathode. Several CdS crystals, differently doped with Ag, Al, and &, have been investigated. An electro-optical method using the Franz-Keldysh effect was employed for domain observation. The influence of the distance between the electrodes on domain formation is discussed.I n CdS werden nichtstabile, wandernde Domiinen beobachtet, die in einem StromSpannungs-Bereich existieren, der zwischen dem Bereich der stationiiren, an der Elektrode anliegenden Domiinen und dem Ubergangsbereich zu undeformierten, wandernden Domiinen liegt. Diese Strom-Spannungs-Bereiche wurden in demselben Kristall durch hnderung der Elektronenkonzentration an der Grenzschicht einer Pseudokathode untersucht. Verschiedene CdS-Kristalle, .die unterschiedlich mit Ag, Al und Cu dotiert waren, wurden untersucht. Eine elektro-optische Methode, die den Franz-Keldysh-Effekt ausnutzt, wurde fur die Beobachtung der Domiinen verwendet. Der EinfluD des Elektrodenabstandes auf die Domiinenausbildung wird diskutiert.

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Slowly Propagating high‐Field Domains in Semiconductors with Negative Differential Conductivity

Cited by 7 publications

References 14 publications

Effect of traps on steadily travelling domains in semiconductors

Effect of traps on steadily travelling domains in semiconductors

Critical Conditions for Transitions between Stationary and Non‐Stationary High‐Field Domains in Semi‐Insulators

Transition between Stationary and Moving High‐Field Domains in CdS in a Range of N‐Shaped Negative Differential Conductivity due to Field‐Quenching

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