Abstract:In CdS, unstable moving domains are observed, which exist in a current-voltage range between the range for stationary electrode-adjacent domains and the range for transitions to undeformed moving domains. These current -voltage ranges have been investigated in the same crystal by changing the electron concentration a t the boundary of a pseudocathode. Several CdS crystals, differently doped with Ag, Al, and &, have been investigated. An electro-optical method using the Franz-Keldysh effect was employed for dom… Show more
“…can be predicted, provided that the crystal is long enough and that the solution does not move too far from the singular pointf3) (small amplitude field instabilities). Such behavior was indeed observed for certain conditions in CdS [28]. There is good agreement between the quantitative results of this theory and the experiment.…”
Section: Summarizing Remarkssupporting
confidence: 83%
“…Two theoretical approaches have been used to contribute to this question : An analysis of small perturbations close to the second singular point in the Poisson and transport equations [13, 17, 261 and a comparison of current-voltage characteristics for both types of domains 1271. Recently experimental evidence has been given [28] that stationary domains start to become unstable at a well defined current-voltage curve (for varying electron densities at the cathode). Here the high-field domains become inhomogeneous and these inhomogeneities move through part of the crystal, continuously changing their shape and causing current oscillations.…”
An analysis of a fluctuation in the neighborhood of singular points of the Poisson and transport equations for a semi-insulator with negative differential conductivity due to field enhanced recombination yields a criterion for the transitions between stationary and non-stationary high-field domains. Critical voltages (domain lengths) and current oscillation frequencies are given for different saturation currents and agree well with experimental results reported for field-quenched CdS. It has been shown that, with increasing applied voltage, alternating regimes of stationary and nonktationary solutions exist for the model discussed, in agreement with recently reported experimental indications.Die Analyse einer Fluktuation in der Niihe der singuliren Punkte der Poisson-und Transportgleichung fur einen Halbleiter mit negativer differentieller Leitfiihigkeit, die auf feldangeregte Rekombination zuruckzufiihren ist, ergibt ein Kriterium fiir die ubergiinge zwischen stationiiren und nicht-stationiiren Hochfelddomiinen. Fur bestimmte Siittigungsstrome egeben sich bestimmte kritische Spannungen (Domiinenllingen) und Frequenzen der Stromoszillationen, die gut mit den an CdS-Kristallen mit Feldtilgung enielten experimentellen Ergebnissen iibereinstimmen. Es kann gezeigt werden, daD fiir das diskutierte Model1 bei Erhohung der angelegten Spannung abwechselnd Gebiete mit stationiiren und nicht stationiiren Losungen auftreten, in tfbereinstimmung mit Experimenten, fiber die kurzlich berichtet wurde.
“…can be predicted, provided that the crystal is long enough and that the solution does not move too far from the singular pointf3) (small amplitude field instabilities). Such behavior was indeed observed for certain conditions in CdS [28]. There is good agreement between the quantitative results of this theory and the experiment.…”
Section: Summarizing Remarkssupporting
confidence: 83%
“…Two theoretical approaches have been used to contribute to this question : An analysis of small perturbations close to the second singular point in the Poisson and transport equations [13, 17, 261 and a comparison of current-voltage characteristics for both types of domains 1271. Recently experimental evidence has been given [28] that stationary domains start to become unstable at a well defined current-voltage curve (for varying electron densities at the cathode). Here the high-field domains become inhomogeneous and these inhomogeneities move through part of the crystal, continuously changing their shape and causing current oscillations.…”
An analysis of a fluctuation in the neighborhood of singular points of the Poisson and transport equations for a semi-insulator with negative differential conductivity due to field enhanced recombination yields a criterion for the transitions between stationary and non-stationary high-field domains. Critical voltages (domain lengths) and current oscillation frequencies are given for different saturation currents and agree well with experimental results reported for field-quenched CdS. It has been shown that, with increasing applied voltage, alternating regimes of stationary and nonktationary solutions exist for the model discussed, in agreement with recently reported experimental indications.Die Analyse einer Fluktuation in der Niihe der singuliren Punkte der Poisson-und Transportgleichung fur einen Halbleiter mit negativer differentieller Leitfiihigkeit, die auf feldangeregte Rekombination zuruckzufiihren ist, ergibt ein Kriterium fiir die ubergiinge zwischen stationiiren und nicht-stationiiren Hochfelddomiinen. Fur bestimmte Siittigungsstrome egeben sich bestimmte kritische Spannungen (Domiinenllingen) und Frequenzen der Stromoszillationen, die gut mit den an CdS-Kristallen mit Feldtilgung enielten experimentellen Ergebnissen iibereinstimmen. Es kann gezeigt werden, daD fiir das diskutierte Model1 bei Erhohung der angelegten Spannung abwechselnd Gebiete mit stationiiren und nicht stationiiren Losungen auftreten, in tfbereinstimmung mit Experimenten, fiber die kurzlich berichtet wurde.
“…For all these unstable moving domains a more detailed analysis of the complete transport system (1)-(3) is necessary and it is beyond the scope of this review. Here, we have to refer to the original publications, first presented by the team of the author [31][32][33][34]. We present here only the results of some of these discussions.…”
Section: Three States Of Conductivity In Cdsmentioning
The history of the high-field domains is given with the description of the experimental and theoretical results of the team of the author in the first decade after their discovery in 1958. This work is done at CdS single crystal platelets that are used as a model substance. The major findings of modern highfield domain research that followed their original research are then reviewed. It is emphasized that all high-field domains are created for reasons of the minimum entropy production principle when the conductivity decreases more than linear within a semiconductor. The application of these high-field domains in important semiconductor devices are reviewed that have now reached a multibillion dollar market.
“…This solution is distinctly different from the well-known Schottky barrier, where the electron density declines steeply from the cathode. Within the domain, the electron density remains initially constant, until at the end of the domain, closer to the anode, the field decreases within a few Debye lengths and then remains constant again until it reaches the anode [9,10]. The space charge region is now shifted from the cathode to the end of the domain.…”
mentioning
confidence: 95%
“…For a first theoretical analysis we used the field-of-direction method in 1961 [8]. Soon thereafter a large number of publications started to broaden the field with many theoretical and experimental investigations of the high-field domains [9][10][11][12][13][14][15][16], and separately of the Franz-Keldysh effect. Except for the further analysis of the stationary high-field domains by the research team of the author [17][18][19][20], the moving domains were almost exclusively analyzed by many other groups [21][22][23][24].…”
It is shown that stationary high-field domains that occur in the range of negative differential conductivity, can be used to clearly identify field-quenched states in CdS. These are distinguished as cathode and anode-adjacent domains and permit an unambiguous determination of electron density and mobility as function of the electric field. The anode-adjacent domain permits additional insight into the high-field properties of CdS in a field range that is now stabilized in the prebreakdown range. Here one finds direct evidence, by using the spectral distribution of the photoconductivity within the domain, of inverting the CdS to p-type either by more complete quenching or by hole injection from the anode. Both types of stationary domains are determined by the work function of blocking contacts and thereby permit a closer analysis of the contact/CdS interface by shifting the space charge region away from the cathode to the bulk-side end of the domain. This allows a more precise determination of the dependence of the work function on the photoconductivity of the adjacent CdS. The field-of-direction (phase portrait) analysis of the time-independent transport and Poisson equations allows a simple classification of the two types of stationary high-field domains relating to the two singular points in the decreasing branch of the current-voltage characteristic. This permits a transparent discussion of the field distribution of these domains that can be directly observed by the Franz-Keldysh effect. Herewith the transition between cathode-to anode-adjacent domains as a function of the applied voltage can be directly followed.
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