1996
DOI: 10.1103/physrevb.53.16474
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Slow relaxation of excited states in strain-induced quantum dots

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Cited by 31 publications
(19 citation statements)
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“…[7][8][9] The stressor island can induce a dilation of the quantum well thereby localizing electrons and holes in the region below the stressor, creating a strain-induced QD ͑SIQD͒. Theoretical 10,11 and experimental work [12][13][14][15][16][17][18][19][20][21] has been done with InP islands as stressors deposited on GaAs/͑InGa͒As and GaAs/͑AlGa͒As QWs.…”
mentioning
confidence: 99%
“…[7][8][9] The stressor island can induce a dilation of the quantum well thereby localizing electrons and holes in the region below the stressor, creating a strain-induced QD ͑SIQD͒. Theoretical 10,11 and experimental work [12][13][14][15][16][17][18][19][20][21] has been done with InP islands as stressors deposited on GaAs/͑InGa͒As and GaAs/͑AlGa͒As QWs.…”
mentioning
confidence: 99%
“…In the strong 3D quantumconfined systems such as semiconductor QDs, phonon bottleneck effect is theoretically predicted due to energy level spacing larger than phonon energy [19]. Although several groups reported observations of phonon bottleneck effect in III-V QDs fabricated by epitaxial techniques [20,21], it has so far not been reported in colloidal CdSe QDs. The trap state model is more plausible, supporting evidences include report by Hines and Guyot-Sionnest here the fluorescence spectrum of CdSe/TOPO has a broad tail arising from what they assigned as surface trap sites in the red region of excitonic luminescence [14].…”
Section: Resultsmentioning
confidence: 99%
“…There is experimental evidence of slowed cooling in QDs [86,87] where hot electrons exhibited lifetimes from a few picoseconds all the way up to nanoseconds [88]. The hot carrier cooling was found to be greatly affected by the presence of nearby holes.…”
Section: Hot Carrier Cellsmentioning
confidence: 96%