Abstract:In conventional emitting devices, the mobility of electron is much higher than that of hole, which increases the non-recombination rate. To generate slow electrons, we demonstrate an electron retarding n-electrode (ERN) on the n-GaN layer of InGaN blue light emitting diode (LED), making more efficient radiation emission. Transparent conductive oxides are estimated to be more suitable for ERN materials. However, for ERN materials used in InGaN LEDs, three requirements should be satisfied, i.e., Ohmic contact to… Show more
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