2020
DOI: 10.1016/j.apsusc.2020.147198
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Slot-die coating of sol–gel-based organic–inorganic nanohybrid dielectric layers for flexible and large-area organic thin film transistors

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Cited by 21 publications
(14 citation statements)
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“…Leakage current density levels below 10 –8 A cm –2 under a 30 V bias condition was observed in all the cases. As reported in previous studies, the addition of the cross-linker (FPA-3F) or inorganic components in the polymeric network (AGPTi) led to an advanced dielectric strength in the EHD-printed GI layers. The leakage of current densities in both the GI bilayers (AGPTi+FPVDF and FCOC+FPVDF) further degraded (below 10 –10 A cm –2 under 30 V) due to the formation of advanced insulating layers on the single FPVDF-HFP layer.…”
Section: Resultssupporting
confidence: 64%
See 1 more Smart Citation
“…Leakage current density levels below 10 –8 A cm –2 under a 30 V bias condition was observed in all the cases. As reported in previous studies, the addition of the cross-linker (FPA-3F) or inorganic components in the polymeric network (AGPTi) led to an advanced dielectric strength in the EHD-printed GI layers. The leakage of current densities in both the GI bilayers (AGPTi+FPVDF and FCOC+FPVDF) further degraded (below 10 –10 A cm –2 under 30 V) due to the formation of advanced insulating layers on the single FPVDF-HFP layer.…”
Section: Resultssupporting
confidence: 64%
“…An electrostatic-force-assisted dispensing technique was utilized for the direct patterning of GI layers via EHD printing. After the fine control of ink formulation, six types of GIs were directly printed using four different dielectric materials(1) poly (vinylidene fluoro-co-hexafluoropropylene) (PVDF-HFP); (2) fluorophenyl azide (FPA)-3F based cross-linked PVDF-HFP (FPVDF-HFP); (3) cyclic olefin copolymer (COC) with FPA-3F (FCOC); (4) organic–inorganic hybrid material named AGPTi. , Covering the gate electrodes using the patterned GIs enabled the fabrication of a single OFET device, memory cells and complementary logic gates. We investigated the effects of various combinations of dielectric materials on the performance of the memory cells, complementary inverters, NAND, and NOR gates, all of which suggested that the selective GI printing technique contributed to a robust switching performance, non-destructive operations, and high gain values.…”
Section: Introductionmentioning
confidence: 99%
“…Third, slot die coating based methods deposit the organic semiconductor solution onto a moving substrate directly through a coating head at a tunable rate. 67–70 Lin et al demonstrated highly ordered single crystalline TIPS pentacene films by using a roll-to-roll slot die coating method, and reported a mobility of 4.2 cm 2 V −1 s −1 for pristine TIPS pentacene. 71 Xie et al reported a roll-to-roll slot die coating method to fabricate thin film transistors.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, the R2R-based fabrication technique is essential for the low-cost and mass production of flexible pressure sensors. Gravure printing is a good candidate for making conductive patterns in the R2R process because of the long life of its printing roll and its high compatibility with the R2R process [13]. However, the behavior of ink in the printing phase is more complex than that of inkjet printing, spray, and slot-die coating, and several printing factors such as web speed and nip pressure have a major interactive effect on the printing quality, which significantly affects the performance of electronic devices such as thin film transistors and flexible capacitors [14][15][16].…”
Section: Introductionmentioning
confidence: 99%