Slight Rotation of c(2×2) Structure of Ba/Mo(110) System

Jo, Sadaharu; Gotoh, Y.

doi:10.1143/jjap.47.8010

Cited by 2 publications

(2 citation statements)

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“…When the intensity was recovered firstly, the RHEED pattern of the (1.5×1.8) structure was most developed. In addition, the RHEED patterns of both c(2×2) and (1.6×2) structures are already shown in our previous reports [9][10][11]. Such results include following features concerning the growth mechanism of Ba films on a Mo(110) substrate at R.T. Ba films grow by the layer-by-layer growth mode on Mo(110) substrate at R.T.…”

Section: Methodssupporting

confidence: 73%

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Growth Modes of Ba on Mo(110) Substrate

Gotoh

2011

JSA

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The growth modes of Ba deposited on a Mo (110) substrate have been investigated by using reflection high-energy electron diffraction (RHEED) and scanning electron microscopy (SEM). In this study, the RHEED specular beam intensity oscillations apparatus is employed to confirm the surface flatness of thin Ba layers on Mo(110) substrate. Ba grows on the Mo(110) substrate via the Stranski-Krastanov growth mode in the temperature range between 300 and 550 °C, in which a monolayer with a (1.5×1.8) structure grows initially, followed by the growth of Ba islands with the (111) Ba plane. Between room temperature (R.T.) and 300 °C, Ba grows on the Mo(110) substrate via the Frank-van der Merwe growth mode, however only several periods of RHEED specular beam intensity oscillations could be observed. Such results suggest that several flat Ba layers grew on Mo(110) substrate via Frank-van der Merwe growth mode and Ba layers have much difficulty in keeping the surface flatness on a Mo(110) substrate. In the temperature range from 300 to 550 °C, only single oscillation was observed, suggesting that the Ba/Mo(110) system adopts the Stranski-Krastanov growth mode at such temperatures with the (1.5×1.8) monolayer.

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Section: Methodssupporting

confidence: 73%

“…metals, however several studies on the growth modes of metallic b.c.c./b.c.c. systems have also been performed [9][10][11]. RHEED specular beam intensity oscillations have come to be an important reliable process tool for controlling the film thickness and the surface flatness mainly for semiconductor materials [12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%