Pn diodes with a planar structure were fabricated by acceptor-ion implantation into 4H-silicon carbide (SiC) (11 2 20). The (11 2 20) diode exhibited an on-resistance of 13.5 mcm 2 and could block 1850 V. The width of intrinsic layers formed near the junction interface was analyzed using a model originally developed by the authors. The forward characteristics of the (11 2 20) diodes were negligibly deteriorated during a long-term stress measurement at a constant current density of 100 A/cm 2 for 3 h, although most diodes fabricated using (0001) were degraded abruptly and irreversibly. This characteristic is very attractive for robust bipolar SiC devices using the (11 2 20) face.
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