Skyrmion-Based Ultra-Low Power Electric-Field-Controlled Reconfigurable (SUPER) Logic Gate

Zhang, Zhizhong; Zhu, Yuanzhi; Zhang, Yue; Zhang, Kun; Jiang, Nan; Zheng, Zhichao; Zhang, Youguang; Zhao, Weisheng

doi:10.1109/led.2019.2946863

Cited by 52 publications

(34 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Such a nonuniform PMA can serve as potential well or barriers to control the local dynamic behavior of skyrmion, e.g., pinning or depinning of skyrmion, which shows promising features for applications in skyrmion transistors, memories, logic gates, etc. [30,[32][33][34][35][36][37]. To explore the intriguing magnetic devices for multifunctional logic applications, most investigations were carried out in the multi-channel and multi-network circuits [34][35][36][37].…”

Section: Of 14mentioning

confidence: 99%

Manipulation of Skyrmion Motion Dynamics for Logical Device Application Mediated by Inhomogeneous Magnetic Anisotropy

et al. 2022

View full text Add to dashboard Cite

Magnetic skyrmions are promising potential information carriers for future spintronic devices owing to their nanoscale size, non-volatility and high mobility. In this work, we demonstrate the controlled manipulation of skyrmion motion and its implementation in a new concept of racetrack logical device by introducing an inhomogeneous perpendicular magnetic anisotropy (PMA) via micromagnetic simulation. Here, the inhomogeneous PMA can be introduced by a capping nano-island that serves as a tunable potential barriers/well which can effectively modulate the size and shape of isolated skyrmion. Using the inhomogeneous PMA in skyrmion-based racetrack enables the manipulation of skyrmion motion behaviors, for instance, blocking, trapping or allowing passing the injected skyrmion. In addition, the skyrmion trapping operation can be further exploited in developing special designed racetrack devices with logic AND and NOT, wherein a set of logic AND operations can be realized via skyrmion–skyrmion repulsion between two skyrmions. These results indicate an effective method for tailoring the skyrmion structures and motion behaviors by using inhomogeneous PMA, which further provide a new pathway to all-electric skyrmion-based memory and logic devices.

show abstract

Section: Of 14mentioning

confidence: 99%

Manipulation of Skyrmion Motion Dynamics for Logical Device Application Mediated by Inhomogeneous Magnetic Anisotropy

et al. 2022

View full text Add to dashboard Cite

show abstract

“…Recently, many devices based on skyrmion have been proposed [61][62]. It is believed that skyrmion-based computing devices are promising as they have advantages of low energy consumption and can operate at extreme high speed [63][64][65][66][67][68][69][70]. The design of logic gates proposed in this work is summarized in Fig.…”

Section: Skyrmion Dynamics On Syaf Bilayer Structurementioning

confidence: 99%

Logic Gates Based on Synthetic Antiferromagnetic Bilayer Skyrmions

et al. 2021

View full text Add to dashboard Cite

Technologies based on magnetic skyrmions such as novel computational devices that can operate at high speed or low energy consumption have been proposed by many researchers.Recently, synthetic antiferromagnetic (SyAF) structures have been proposed to increase the stability and mobility of skyrmions by reducing or eliminating the skyrmion Hall effect. Here, we numerically study the current-induced dynamics of skyrmions on SyAF bilayer structures.We demonstrate the effective control and manipulation of SyAF skyrmions, including the directional displacement and alignment. Besides, we design SyAF skyrmion-based logic gates such as the AND, OR, XOR and NOT gates. Our design provides guidance for future development of spintronic computing devices that use topological nanoscale spin textures as information carriers.

show abstract

“…There are various spintronic devices like spin-valve [240], MTJ [81,[241][242][243][244][245], ferroelectric tunnel junction (FTJ) [246][247][248], domain wall [249][250][251][252][253][254][255][256][257], Skyrmion [258][259][260][261]and all spin logic (ASL) devices [262][263][264][265][266][267][268][269], etc. have been reported in the literature.…”

Section: Hybrid Cmos/mtj Circuitsmentioning

confidence: 99%

From MTJ Device to Hybrid CMOS/MTJ Circuits: A Review

et al. 2020

View full text Add to dashboard Cite

Spintronics is one of the growing research areas which has the capability to overcome the issues of static power dissipation and volatility suffered by the complementary metal-oxide-semiconductor (CMOS) industry. Magnetic tunnel junction (MTJ), one of the prominent spintronic devices, is not only used to develop the fully non-volatile-logic (NV-L) but combines magnetism and electronics to develop next-generation NVmemory (NV-M) and hybrid CMOS/MTJ circuits. To be specific towards hybrid CMOS/MTJ circuits, the fabrication of first hybrid full-adder in 2009, fabrication of MTJ based 240-tile NV-field programmable gate array (NV-FPGA) chip in 2013, fabrication of a 3000-6-input-LUTs based NV-FPGA chip in 2015, fabrication of MTJ based NV-logic-in-memory-large scale integration (NV-LIM-LSI) in 2017 and recently the fabrication of a full hybrid magnetic/CMOS System on Chip (SoC) under EU GREAT Project in 2019 has strengthened the belief and motivated the researcher to be continued in this domain. This review article aims to provide the complete design flow of hybrid CMOS/MTJ circuits developed using one of the fab compatible MTJ spintronic devices and its integration with conventional CMOS logic. The broad coverage of the article is MTJ construction, its switching mechanisms, a brief history of various compact models, reliability issues, and the concept of logic-in-memory (LIM) architecture. Finally, the article concludes with the challenges and future prospects of hybrid CMOS/MTJ circuits, which will motivate people in academia to cultivate research in this domain and industry to realize the prototype for a wide range of potential applications.

show abstract

Skyrmion-Based Ultra-Low Power Electric-Field-Controlled Reconfigurable (SUPER) Logic Gate

Cited by 52 publications

References 26 publications

Manipulation of Skyrmion Motion Dynamics for Logical Device Application Mediated by Inhomogeneous Magnetic Anisotropy

Manipulation of Skyrmion Motion Dynamics for Logical Device Application Mediated by Inhomogeneous Magnetic Anisotropy

Logic Gates Based on Synthetic Antiferromagnetic Bilayer Skyrmions

From MTJ Device to Hybrid CMOS/MTJ Circuits: A Review

Contact Info

Product

Resources

About