SkyFlash EC project: Architecture for a 1Mbit S-Flash for space applications

Abstract

This work presents an innovative architecture to fabricate a non volatile memory for space applications using a SFlash memory cell. The design takes into account the different effects of the radiation that could damage the circuits and the memory cell in harsh environments. The memory cell has been developed by TowerJazz Semiconductors to be compatible with the standard 180nm CMOS process. A 1Mbit prototype has been designed using the presented architecture.

Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions

“…Another reason for this recovering during irradiation is the possible saturation of the oxide trapped charge first and then the interface trapped charge, which can be caused by the high total dose exposure. This can be supported by (1) and 2, where the irradiation induced rate of threshold voltage shift will reduce from square to linear dependence on oxide thickness. During annealing, at room temperature, the output voltage recovered at a higher rate.…”

“…Radiation-tolerant, high-accuracy, reference circuits are widely used in almost all circuits and systems that are intended for space applications. Analog and mixed-signal circuits and systems such as flash memories [1], ADCs, operational amplifiers, LDOs and DACs, require a stable and reliable reference voltage/current in order to perform within their specifications [2][3][4][5]. Any performance deviations of the reference voltage will consequently deteriorate the performance of all the subsequent circuits, leading to a malfunction or even failure of the overall system.…”