Size effect on the magnetic and electronic properties of the monolayer lateral hetero-junction WS2-MoS2 nanoribbon

Wen, Yan-Ni; Xia, Minggang; Zhang, Shengli

doi:10.1016/j.apsusc.2016.02.215

Cited by 26 publications

(11 citation statements)

References 25 publications

(28 reference statements)

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“…First, the 4-inch silicon wafer with a thickness of 285 nm SiO 2 was cut into square small pieces with an area of 4–6 cm 2 by a diamond pen. Then, the SiO 2 /Si substrates were placed into acetone, deionized water, absolute ethanol, and deionized water for ultrasonic cleaning in 15 min, 10 min, 15 min, and 10 min, respectively [22]. And these cleaned substrates were blown dry with the nitrogen gas gun.…”

Section: Experimental Methodsmentioning

confidence: 99%

Research on the Factors Affecting the Growth of Large-Size Monolayer MoS2 by APCVD

et al. 2018

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The transition-metal chalcogenides (TMDs) are gaining increased attention from many scientists recently. Monolayer MoS2 is an emerging layered TMD material with many excellent physical and electrical properties. It can be widely used in catalysis, transistors, optoelectronics and integrated circuits. Here, the large-sized monolayer MoS2 is grown on the silicon substrate with a 285-nm-thick oxide layer by atmospheric pressure chemical vapor deposition (APCVD) of sulfurized molybdenum trioxide. This method is simple and it does not require vacuum treatment. In addition, the effects of growth conditions, such as sulfur source, molybdenum source, growth temperature, and argon flow rate on the quality and area of MoS2 are further studied systematically. These analysis results help to master the morphology and optical properties of monolayer MoS2. The high quality, excellent performance, and large-size monolayer MoS2 under the optimal growth condition is characterized by optical microscopy, AFM, XPS, photoluminescence, and Raman spectroscopy. The Raman spectrum and PL mapping show that the grown MoS2 is a uniform triangular monolayer with a side length of 100 μm, which can pave the way for the applications of photodetectors and transistors.

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Section: Experimental Methodsmentioning

confidence: 99%

Research on the Factors Affecting the Growth of Large-Size Monolayer MoS2 by APCVD

et al. 2018

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“…Due to the importance of 2D TMD materials themselves and also being motivated by the experimental synthesis of various in‐plane TMD heterostructures, there have been plenty of relevant first‐principles calculations . Those earlier theoretical studies mainly focused on the absolute positions and charge distributions of valence band maximum (VBM) and conduction band minimum (CBM) of the heterostructures .…”

Section: Electronic Properties Of Heterostructuresmentioning

confidence: 99%

Growth control, interface behavior, band alignment, and potential device applications of 2D lateral heterostructures

Zhao

Cheng

Han

et al. 2017

WIREs Comput Mol Sci

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Two‐dimensional (2D) lateral heterostructures open a new avenue for intentional design of novel 2D devices with superior electronic and optoelectronic properties. Since 2012, many groups have successfully synthesized lateral graphene/h‐BN heterostructures on metal substrates and the fabrication of in‐plane heterostructures of transition metal dichalcogenides has also been reported since 2014. In this review, we first present an overview on recent progress of the experimental fabrications of 2D lateral heterostructures, along with the growth mechanism from atomistic simulations. The atomic structures of interfaces, electronic and thermal transport properties across interfaces for some 2D lateral heterojunctions are then discussed. Our current theoretical understanding on the band alignments and electronic properties as well as potential device applications of these lateral heterostructures are summarized. Finally, we give a perspective on this fast‐growing field. WIREs Comput Mol Sci 2018, 8:e1353. doi: 10.1002/wcms.1353 This article is categorized under: Structure and Mechanism > Computational Materials Science

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“…The Raman spectrum and PL spectrum of the MoS 2 /WS 2 vertical hetero-junction are systematically analyzed by the LabRam HR Evolution Raman microscopy, equipped with the 532 nm laser under the 1mW laser power, and the laser spot size is 1µm. The high-resolution images can be obtained by using the 50× objective lens, 1800 lines/mm grating and the 500 nm imaging steps [19]. At the same time, the field emission scanning electron microscope (FESEM) and atomic force microscope (AFM) are also used to characterize the surface morphology and thickness of the MoS 2 /WS 2 vertical hetero-junction.…”

Section: The Characterization Of Mos 2 /Ws 2 Vertical Heterojunctionmentioning

confidence: 99%

The Large-Scale Preparation and Optical Properties of MoS2/WS2 Vertical Hetero-Junction

et al. 2020

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A variety of hetero-junctions can be constructed to form the basic structural units in the different optoelectronic devices, such as the photo-detectors, solar cells, sensors and light-emitting diodes. In our research, the large-area high-quality MoS2/WS2 vertical hetero-junction are prepared by the two-step atmospheric pressure chemical vapor deposition (APCVD) methods and the dry transfer method, and the corresponding optimal reaction conditions of MoS2/WS2 vertical hetero-junction are obtained. The morphology, composition and optical properties of MoS2/WS2 vertical hetero-junction are systematically characterized by the optical microscopy, Raman spectroscopy, photoluminescence spectroscopy, atomic force microscopy and the field emission scanning electron microscopy. Compared to the mechanical transfer method, the MoS2/WS2 vertical hetero-junction sample obtained by the APCVD and dry transfer methods have lower impurity content, cleaner interfaces and tighter interlayer coupling. Besides, the strong interlayer coupling and effective interlayer charge transfer of MoS2/WS2 vertical hetero-junction are also further studied. The photoluminescence intensity of MoS2/WS2 vertical hetero-junction is significantly reduced compared to the single MoS2 or WS2 material. In general, this research can help to achieve the large-scale preparation of various Van der Waals hetero-junctions, which can lay the foundation for the new application of optoelectronic devices.

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Size effect on the magnetic and electronic properties of the monolayer lateral hetero-junction WS2-MoS2 nanoribbon

Cited by 26 publications

References 25 publications

Research on the Factors Affecting the Growth of Large-Size Monolayer MoS2 by APCVD

Research on the Factors Affecting the Growth of Large-Size Monolayer MoS2 by APCVD

Growth control, interface behavior, band alignment, and potential device applications of 2D lateral heterostructures

The Large-Scale Preparation and Optical Properties of MoS2/WS2 Vertical Hetero-Junction

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