Research on the Factors Affecting the Growth of Large-Size Monolayer MoS2 by APCVD

Han, Tao; Liu, Hongxia; Wang, Shulong; Li, Wei; Chen, Shupeng; Yang, Xiaoli; Cai, Ming

doi:10.3390/ma11122562

Cited by 6 publications

(4 citation statements)

References 32 publications

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“…First, we see much smaller triangular domains along with truncated triangles in the mix. The formation of truncated domains is consistent with what is expected for a S-deficient condition and has been reported previously by other groups [23,24,31,34] that have used traditional MoO3 as the precursor. Second, and perhaps most intriguingly, we discovered how this S-deficient condition resulted in the formation of intermediates near the substrate's leading edge (Figure 7e).…”

Section: Domain Shape Dependency On S:mo Molar Loading Ratio and Identifying The Regime Of Intermediate-state-free Growth Of Mos2supporting

confidence: 90%

CVD Synthesis of Intermediate State-Free, Large-Area and Continuous MoS2 via Single-Step Vapor-Phase Sulfurization of MoO2 Precursor

et al. 2021

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The low evaporation temperature and carcinogen classification of commonly used molybdenum trioxide (MoO3) precursor render it unsuitable for the safe and practical synthesis of molybdenum disulfide (MoS2). Furthermore, as evidenced by several experimental findings, the associated reaction constitutes a multistep process prone to the formation of uncontrolled amounts of intermediate MoS2−yOy phase mixed with the MoS2 crystals. Here, molybdenum dioxide (MoO2), a chemically more stable and safer oxide than MoO3, was utilized to successfully grow cm-scale continuous films of monolayer MoS2. A high-resolution optical image stitching approach and Raman line mapping were used to confirm the composition and homogeneity of the material grown across the substrate. A detailed examination of the surface morphology of the continuous film revealed that, as the gas flow rate increased by an order of magnitude, the grain-boundary separation dramatically reduced, implying a transition from a kinetically to thermodynamically controlled growth. Importantly, the single-step vapor-phase sulfurization (VPS) reaction of MoO2 was shown to suppress intermediate state formations for a wide range of experimental parameters investigated and is completely absent, provided that the global S:Mo loading ratio is set higher than the stoichiometric ratio of 3:1 required by the VPS reaction.

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Section: Domain Shape Dependency On S:mo Molar Loading Ratio and Identifying The Regime Of Intermediate-state-free Growth Of Mos2supporting

confidence: 90%

CVD Synthesis of Intermediate State-Free, Large-Area and Continuous MoS2 via Single-Step Vapor-Phase Sulfurization of MoO2 Precursor

et al. 2021

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“…The two-dimensional material is used as the channel material compared to the traditional bulk material, which can not only help to suppress the short channel effect, but also effectively reduces the static leakage current [6,7]. In addition, the two-dimensional materials also have the higher specific surface area, excellent mechanical strength, higher optical transparency, and various excellent photoelectric characteristics, so it can be widely used in the gas sensors [8], flexible electronics [9], and photodetectors [10]. Compared to the Si material, there are no dangling bonds in the low-dimensional transition metal sulfur compound materials when the transistor size is at the zoom limit [11].…”

Section: Introductionmentioning

confidence: 99%

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

et al. 2019

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The two-dimensional materials can be used as the channel material of transistor, which can further decrease the size of transistor. In this paper, the molybdenum disulfide (MoS2) is grown on the SiO2/Si substrate by atmospheric pressure chemical vapor deposition (APCVD), and the MoS2 is systematically characterized by the high-resolution optical microscopy, Raman spectroscopy, photoluminescence spectroscopy, and the field emission scanning electron microscopy, which can confirm that the MoS2 is a monolayer. Then, the monolayer MoS2 is selected as the channel material to complete the fabrication process of the back-gate field effect transistor (FET). Finally, the electrical characteristics of the monolayer MoS2-based FET are tested to obtain the electrical performance. The switching ratio is 103, the field effect mobility is about 0.86 cm2/Vs, the saturation current is 2.75 × 10−7 A/μm, and the lowest gate leakage current is 10−12 A. Besides, the monolayer MoS2 can form the ohmic contact with the Ti/Au metal electrode. Therefore, the electrical performances of monolayer MoS2-based FET are relatively poor, which requires the further optimization of the monolayer MoS2 growth process. Meanwhile, it can provide the guidance for the application of monolayer MoS2-based FETs in the future low-power optoelectronic integrated circuits.

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“…However, achieving large-scale, defect-free, and cost-effective production of MoS 2 remains a crucial goal. CVD-based synthesis of MoS 2 films has been accomplished through sulfurization of Mo-containing precursors, including Mo [ 16 ], MoO 2 [ 17 , 18 , 19 , 20 , 21 ], and MoO 3 [ 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 , 58 , 59 ]. Among these options, the utilization of MoO 3 powder as a precursor has emerged as the preferred method, owing to its ability to yield large-area single-crystal films with continuous coverage [ 42 , 43 , 44 , 45 , 46 , …”

Section: Introductionmentioning

confidence: 99%

CVD Synthesis of MoS2 Using a Direct MoO2 Precursor: A Study on the Effects of Growth Temperature on Precursor Diffusion and Morphology Evolutions

Somphonsane,

Chiawchan,

Bootsa-ard

et al. 2023

Materials

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In this study, the influence of growth temperature variation on the synthesis of MoS2 using a direct MoO2 precursor was investigated. The research showed that the growth temperature had a strong impact on the resulting morphologies. Below 650 °C, no nucleation or growth of MoS2 occurred. The optimal growth temperature for producing continuous MoS2 films without intermediate-state formation was approximately 760 °C. However, when the growth temperatures exceeded 800 °C, a transition from pure MoS2 to predominantly intermediate states was observed. This was attributed to enhanced diffusion of the precursor at higher temperatures, which reduced the local S:Mo ratio. The diffusion equation was analyzed, showing how the diffusion coefficient, diffusion length, and concentration gradients varied with temperature, consistent with the experimental observations. This study also investigated the impact of increasing the MoO2 precursor amount, resulting in the formation of multilayer MoS2 domains at the outermost growth zones. These findings provide valuable insights into the growth criteria for the effective synthesis of clean and large-area MoS2, thereby facilitating its application in semiconductors and related industries.

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Research on the Factors Affecting the Growth of Large-Size Monolayer MoS2 by APCVD

Cited by 6 publications

References 32 publications

CVD Synthesis of Intermediate State-Free, Large-Area and Continuous MoS2 via Single-Step Vapor-Phase Sulfurization of MoO2 Precursor

CVD Synthesis of Intermediate State-Free, Large-Area and Continuous MoS2 via Single-Step Vapor-Phase Sulfurization of MoO2 Precursor

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

CVD Synthesis of MoS2 Using a Direct MoO2 Precursor: A Study on the Effects of Growth Temperature on Precursor Diffusion and Morphology Evolutions

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