Size effect in galvanomagnetic phenomena in bismuth films doped with tellurium

Грабов, В. М.; Демидов, Е. В.; Комаров, В. А.; Matveev, D. Yu.; Nikolaeva, A.; Markushevs, D.; Konstantinov, E. V.; Konstantinova, E

doi:10.1134/s106378261405008x

Cited by 15 publications

(12 citation statements)

References 8 publications

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“…So we took not just a bismuth, but bismuth with added antimony. If it is necessary to increase rather than reduce the concentration of charge carriers, bismuth is alloyed by tin or tellurium impurities [6,7]. As it is known [8], bismuth and antimony form a series of solid solutions with any component content.…”

Section: Methodsmentioning

confidence: 99%

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Fully absorbing one-dimensional photonic crystal

Yu.

2022

Optics and Spectroscopy

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We investigated the resonant absorption capacity of a one-dimensional photonic crystal, the relationship between the resonant frequency and the width of its absorption band, and the composition and thickness of the layers forming it. Frequency oscillations of radiation reflection from 2.5-layer semimetal-dielectric-metal film structures caused by interference on the film thickness were studied. We measured the infrared reflection spectra of Bi87Sb13 film samples on mirror-smooth substrates with a reflective metal (Al, Ti) layer and a dielectric layer MgF2+LiF or SiO2+Si3N4). We have developed samples that absorb up to 99.5% of radiation at maximum and integrally up to 60% of resonant thermal radiation. The composition of structures for interfacing with silicon technologies and constructing matrices of sensitive bolometric receivers has been optimized. We have proposed the implementation of active selective thermal imaging systems with matching the source and receiver of radiation simultaneously in frequency and frequency band. The analogy of the absorbing properties of film structures and the properties of human eye cells was shown. Keywords: bismuth, film, IR, interference, eye color sensitivity.

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Section: Methodsmentioning

confidence: 99%

“…Therefore, the content of the components is uniform throughout the film volume. Bi 1−x Sb x composites have a layered crystalline structure [4][5][6][7][8][9], just like the bismuth itself. The atoms in the layers are connected much stronger than the layers between each other.…”

Section: Methodsmentioning

confidence: 99%

Fully absorbing one-dimensional photonic crystal

Yu.

2022

Optics and Spectroscopy

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“…Bismuth films can be synthesized by various methods, the most used of which are electrochemical deposition [2,13,16,20], pulsed laser deposition [12,21], vacuum thermal evaporation [22,23], melt spinning [13,24], etc. Pulsed laser deposition allows obtaining highquality thin films due to a high density of grains nucleation.…”

Section: Introductionmentioning

confidence: 99%

Electrodeposition conditions-dependent crystal structure, morphology and electronic properties of Bi films

Fedotov

Shendyukov

Tsybulskaya

et al. 2021

Journal of Alloys and Compounds

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“…The average crystallite size varies slightly logarithmically with increasing thickness and concentration of tellurium, as shown by Dilner and Schnelle on the basis of the Mayadas-Shackes model [3,4]. The influence of the tellurium concentration on the electrical and galvanomagnetic properties of bismuth films is considered in detail in works [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

“…In all the works mentioned above [1][2][3][4][5][6][7][8], the question about measuring the concentration of impurities by modern methods remains open. For example, for the preparation of Bi-Te films, the concentration of tellurium impurity in bismuth was determined from the weight of the sample of the substance being evaporated, and it was believed that the concentration of tellurium does not change upon transition from a single crystal to a film [6].…”

Section: Introductionmentioning

confidence: 99%

The Concentration Measurements of Tellurium Donor Impurity in Lamellar Bismuth Samples by the Time-of-Flight Mass Spectrometry Method

Matveev¹,

Starov²

2019

J. Nano- Electron. Phys.

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The possibility of determining in-depth distribution of tellurium donor impurity in lamellar bismuth samples using the time-of-flight mass spectrometry and electron microscopy methods in the concentration range of 0.005-0.150 at. % Te is studied in the present paper. To measure the amount of tellurium in lamellar bismuth samples, we used a LUMAS-30 time-of-flight mass spectrometer with a pulsed low-pressure glow gas discharge in a combined hollow cathode and a Zeiss Evo-40 scanning electron microscope. The samples for measurements were cut from the middle of the ingots of the BiTe alloy with the required impurity concentration. The samples presented a thin plate of a size of 10 × 10 mm 2 and 1 mm thickness. The samples were thoroughly washed in distilled water and then etched in a 65 % solution of nitric acid to remove the surface layer with traces of external contaminants. The samples were strengthened as the bottom of the hollow cathode in the gas-discharge cell, where the impulse ionization of the sample atoms in a glow discharge plasma occurred. The relative error in the in-depth distribution of impurities did not exceed 6 %, while the error in determining the concentration of impurities by a mass spectrometer, according to the passport data, did not exceed 5 %. The sensitivity limit in determining the concentration of impurities in the device LUMAS-30, according to the passport data, was 10-6 at. %. As a result of research, we set that the time-of-flight mass spectrometry method gives a very accurate determination of the tellurium impurity concentration, and also allows to establish a uniform distribution of tellurium over the volume of a doped bismuth lamellar sample. The electron microscopy method using a Zeiss Evo-40 microscope does not give a uniform distribution of tellurium over the sample volume.

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Size effect in galvanomagnetic phenomena in bismuth films doped with tellurium

Cited by 15 publications

References 8 publications

Fully absorbing one-dimensional photonic crystal

Fully absorbing one-dimensional photonic crystal

Electrodeposition conditions-dependent crystal structure, morphology and electronic properties of Bi films

The Concentration Measurements of Tellurium Donor Impurity in Lamellar Bismuth Samples by the Time-of-Flight Mass Spectrometry Method

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