size and density control of InAs quantum dots by selective MOVPE growth employing stripe mask array and composition-varied GaInAs layer

Abstract

Selective MOVPE growth of self-assembled InAs quantum dots (QDs) using a SiO 2 narrow stripe mask array and composition-varied GaInAs layers successfully yielded a variation of size across the array while keeping density.

Wideband wavelength electroluminescence from InAs/InP QDs using double-cap procedure by MOVPE selective area growth

“…The size of QDs becomes large near the wide mask and small at the far side of the wide mask [10,11]. Fig.…”

Controlling emission wavelength of double-capped InAs quantum dots by selective MOVPE employing stripe mask array

“…As a simple fabrication method for this requirement, a selective area growth by metal-organic vapor phase epitaxy (MOVPE) has been reported [2][3][4], and there were some reports to control the size of the QDs by using this technique [5,6]. In the last report, we have demonstrated that this technique was applied to control the size of self-assembled QDs by using a narrow stripe mask array with a wide mask at one side of the array [7], and have controlled the strain by changing the composition of GaInAs buffer layer [8].…”

InAs/InP QDs grown by selective MOVPE growth using double‐cap procedure for broadband LED improved p‐cladding layer

“…The source material does not grow on the SiO 2 , so that the concentration of material at upper part of the SiO 2 substrate increases, and the lateral vapor diffusion occurs to the non-masked part of the mask pattern. The size of the QDs was larger near the wide mask and smaller at the far side of the wide mask [9,10]. The Ga and In contents in the GaInAs buffer layer changes in each array waveguide, due to difference in the diffusion length between Ga and In.…”

“…We have previously reported InAs/ InP QDs broadband light emitting diodes (LEDs) grown by selective metal organic vapor phase epitaxy (MOVPE) using the double-cap procedure [3][4][5][6]. To obtain in-plane energy level control of QDs, selective MOVPE growth [7] was performed using an asymmetric array waveguide pattern [8][9][10]. Layer by layer control of the multi stacked QD energy was achieved by changing the height of the QDs using the double-cap procedure, and the energy gap of InAs QDs was varied by compositional change of the GaInAs buffer layer under the QDs, because of Ga interdiffusion into InAs QDs from GaInAs buffer layer [11].…”

“…Layer by layer control of the multi stacked QD energy was achieved by changing the height of the QDs using the double-cap procedure, and the energy gap of InAs QDs was varied by compositional change of the GaInAs buffer layer under the QDs, because of Ga interdiffusion into InAs QDs from GaInAs buffer layer [11]. At the same time, height and lateral size of InAs QDs was a little changed by changing the composition of the GaInAs buffer layer under the QDs [10,12] and also strain effect was influenced [11,12]. An EL spectrum width of more than 200 nm was obtained from this LED device [13]; however, the output power from the 3rd QDs layer was very weak and the spectrum width was not as broad as expected.…”