2014
DOI: 10.1117/1.jmm.13.1.011202
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Site-specific metrology, inspection, and failure analysis of three-dimensional interconnects using focused ion beam technology

Abstract: Abstract. Today three-dimensional system-in-package integration together with advanced interconnect technologies based on through silicon vias, through encapsulant vias, and microbumps are considered some of the most promising enabling technologies for "More than Moore" solutions. These technologies involve vertical die stacking or chip embedding with high-density interconnects and are based on combinations of process steps that come from formerly strictly separated technology areas. Thus, there is an increasi… Show more

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Cited by 14 publications
(15 citation statements)
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“…However, the stage was not rotated to optimize the take-off angle of X-rays toward the EDX detector from the milled surface and thus the X-ray photon collection was not optimized and longer acquisition times were needed for the analysis. 28 Dual beam FIB/SEM has been extensively used in the semiconductor industry 29 and has found other applications in biological sciences, 30 fuel cells, optical coatings, atmospheric chemistry, 28 and primarily TEM sample preparation. 31 Applications of FIB milling in energetics have been limited.…”
Section: Dual Beam Fib/semmentioning
confidence: 99%
“…However, the stage was not rotated to optimize the take-off angle of X-rays toward the EDX detector from the milled surface and thus the X-ray photon collection was not optimized and longer acquisition times were needed for the analysis. 28 Dual beam FIB/SEM has been extensively used in the semiconductor industry 29 and has found other applications in biological sciences, 30 fuel cells, optical coatings, atmospheric chemistry, 28 and primarily TEM sample preparation. 31 Applications of FIB milling in energetics have been limited.…”
Section: Dual Beam Fib/semmentioning
confidence: 99%
“…Interferometer [24,25] Tilt/deflection of sample AFM [26] Topographic of surface Pull-in [27,28] Pull-in voltage XRD [29] indentation imprint µ strain gauge [30] Strain/stress Acoustic emission [31] Device in package testing…”
Section: Destructive Non-destructivementioning
confidence: 99%
“…The last decade has witnessed an admirable surge for the introduction of diverse general characterizing and testing methods for MEMS devices, some of which are shown in Table 1 [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41]. These methods are categorized into two main groups: destructive and non-destructive testing approaches.…”
Section: Introductionmentioning
confidence: 99%
“…For CBRAM, the switching mechanism, i.e., filament growth, has been observed using in situ STEM (scanning transmission electron microscopy)19. For observation of CF, the electron beam absorbed current (EBAC) can be used as a quick and effective method to identify different resistance levels20. The direct observation of CF in ReRAM using the EBAC supports the CF mechanism for ReRAM21.…”
mentioning
confidence: 90%