2017
DOI: 10.1038/s41598-017-12642-7
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Site-selective spectroscopy with depth resolution using resonant x-ray reflectometry

Abstract: Combining dissimilar transition metal oxides (TMOs) into artificial heterostructures enables to create electronic interface systems with new electronic properties that do not exist in bulk. A detailed understanding of how such interfaces can be used to tailor physical properties requires characterization techniques capable to yield interface sensitive spectroscopic information with monolayer resolution. In this regard resonant x-ray reflectivity (RXR) provides a unique experimental tool to achieve exactly this… Show more

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Cited by 12 publications
(6 citation statements)
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“…22,26 The element-specificity inherent to core-level spectroscopy offers the additional capability to distinguish the individual subcomponent materials in heterostructures. 27,28 Finally, the unique sensitivity of core-level spectroscopy to bonding, bond distances, and symmetry provides simultaneous structural information of photoexcited materials. [29][30][31][32][33][34] In the present study, we apply sub-5 fs XUV transient absorption spectroscopy on a 2H-MoTe2 semiconductor thin film (~50 nm/70 layers) to probe the dynamics of intraband carrierspecific relaxation, interband electron-hole recombination, and excited-state coherent lattice displacement.…”
mentioning
confidence: 99%
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“…22,26 The element-specificity inherent to core-level spectroscopy offers the additional capability to distinguish the individual subcomponent materials in heterostructures. 27,28 Finally, the unique sensitivity of core-level spectroscopy to bonding, bond distances, and symmetry provides simultaneous structural information of photoexcited materials. [29][30][31][32][33][34] In the present study, we apply sub-5 fs XUV transient absorption spectroscopy on a 2H-MoTe2 semiconductor thin film (~50 nm/70 layers) to probe the dynamics of intraband carrierspecific relaxation, interband electron-hole recombination, and excited-state coherent lattice displacement.…”
mentioning
confidence: 99%
“…In some cases, photoexcited holes and electrons can be separately and simultaneously attributed to changes in spectrally distinct transitions from atomic core levels to the transiently empty states in the VB (holes) and reduced absorption in the transiently filled CB (electrons). These phenomena are collectively referred to here as “state-filling.” It is possible not only to distinguish the hole and electron distributions but also to gain energy-dependent dynamics of the specific hot carriers within the VB and CB. , The element-specificity inherent to core-level spectroscopy offers the additional capability to distinguish the individual subcomponent materials in heterostructures. , Finally, the sensitivity of core-level spectroscopy to bonding, bond distances, and symmetry provides simultaneous structural information on photoexcited materials. …”
mentioning
confidence: 99%
“…Their thickness and stacking has been defined according to precise crystallographic data for LAO/STO heterostructures 21 , 22 . For each of the atomic slices an energy dependent index of refraction was then calculated using the of the elements and their concentrations 20 , 23 , 24 . Regarding the termination of substrate and film, the LAO/STO interface in the models was fixed to be TiO -LaO, since the films were grown on TiO -terminated substrates, whereas no preference for the surface termination of LAO was assumed.…”
Section: Resultsmentioning
confidence: 99%
“…[24] As such, XR(M)R allows one to determine the depthresolved, element-specific electronic and magnetic properties in a complex oxide heterostructure. Particularly noteworthy XR(M) R studies have been carried out on synchrotrons such as HZB-BESSY II, [25][26][27] SOLEIL, [28] CLS, [29] SLS, [30] ALS, [31] APS, [32] and ALBA, [33] where specialized setups are available.…”
Section: Introductionmentioning
confidence: 99%