The o f tlir diol of ally1 tosylate ( Catalytic Asymmetric Aminohydroxylation (AA) of Olefins""Guigen Li, Han-Ting Chang, and K. Barry Sharpless* Deciiccrrcd to the niemory of F6li.y SerratosuThe /&hydroxyamino group is frequently found in biologically active molecules. We report here that this important unit can now be synthesized directly from olefins in enantiomerically enriched form. The new osmium-catalyzed asymmetric process is exemplified by the synthesis of the enantiomers of the taxol side chain (2 and en/-2) from methyl cinnamate (1) (Scheme 1).

No abstract

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 1020 cm−3. Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first-order electron and hole decay of ∼1 ps suggests a Shockley–Read–Hall recombination mechanism. The simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.

The NH 4 + (H 2 O) 3-6 cluster ions synthesized by a free jet expansion contain a variety of structural isomers. This investigation identifies some of these isomers by employing vibrational predissociation spectroscopy (VPS) in conjunction with ab initio calculations. The NH 4 + (H 2 O) n ions are produced by corona discharge of NH 3 /H 2 O seeded in a H 2 beam. They are mass-selected and then vibrationally cooled in an octopole ion trap for infrared spectroscopic measurements. In the VPS, four distinct stretching vibrations (hydrogen-bonded and non-hydrogen-bonded NH and OH) are closely examined. The characteristic absorptions of these stretches, together with systematic temperature dependence measurements of their band intensities, allow us to identify both cyclic and noncyclic isomers in the supersonic jet. Such identification is corroborated by ab initio calculations performed at the B3LYP and MP2 levels using the 6-31+G* basis set. The satisfactory agreement in both vibrational frequencies and absorption intensities between observations and calculations demonstrates that small-sized NH 4 + (H 2 O) n cluster ions can be structurally determined in the gas phase.

The thermalization of hot carriers and phonons gives direct insight into the scattering processes that mediate electrical and thermal transport. Obtaining the scattering rates for both hot carriers and phonons currently requires multiple measurements with incommensurate timescales. Here, transient extreme-ultraviolet (XUV) spectroscopy on the silicon 2p core level at 100 eV is used to measure hot carrier and phonon thermalization in Si(100) from tens of femtoseconds to 200 ps, following photoexcitation of the indirect transition to the Δ valley at 800 nm. The ground state XUV spectrum is first theoretically predicted using a combination of a single plasmon pole model and the Bethe-Salpeter equation with density functional theory. The excited state spectrum is predicted by incorporating the electronic effects of photo-induced state-filling, broadening, and band-gap renormalization into the ground state XUV spectrum. A time-dependent lattice deformation and expansion is also required to describe the excited state spectrum. The kinetics of these structural components match the kinetics of phonons excited from the electron-phonon and phonon-phonon scattering processes following photoexcitation. Separating the contributions of electronic and structural effects on the transient XUV spectra allows the carrier population, the population of phonons involved in inter- and intra-valley electron-phonon scattering, and the population of phonons involved in phonon-phonon scattering to be quantified as a function of delay time.

In this study, we performed ab initio calculations and obtained the bimolecular rate coefficients for the CH2OO/CH3CHOO reactions with H2O/(H2O)2. The energies were calculated with QCISD(T)/CBS//B3LYP/6-311+G(2d,2p) and the partition functions were estimated with anharmonic vibrational corrections by using the second order perturbation theory. Furthermore, we directly measured the rate of the CH2OO reaction with water vapor at high temperatures (348 and 358 K) to reveal the contribution of the water monomer in the CH2OO decay kinetics. We found that the theoretical rate coefficients reproduce the experimental results of CH2OO for a wide range of temperatures. For anti- (syn-) CH3CHOO, we obtained theoretical rate coefficients of 1.60 × 10(-11) (2.56 × 10(-14)) and 3.40 × 10(-14) (1.98 × 10(-19)) cm(3) s(-1) for water dimer and monomer reactions at room temperature. From the detailed analysis of the quantum chemistry and approximations for the thermochemistry calculations, we conclude that our calculated values would be within a factor of 3 of the correct values. Furthermore, at [H2O] = 1 × 10(17) to 5 × 10(17) cm(-3), we estimate that the effective first-order rate coefficients for CH2OO, anti- and syn-CH3CHOO reactions with water vapor will be ∼10(3), ∼10(4), and ∼10(1) s(-1), respectively. Thereby, for Criegee intermediates with a hydrogen atom on the same side as the terminal oxygen atom, the reaction with water vapor will likely dominate the removal processes of these CIs in the atmosphere.

We employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra-and interband carrier relaxation and the light-induced structural dynamics in nanoscale thin films of layered 2H-MoTe2 semiconductor. By interrogating the valence electronic structure via localized Te 4d (39-46 eV) and Mo 4p (35-38 eV) core levels, the relaxation of the photoexcited hole distribution is directly observed in real time. We obtain hole thermalization and cooling times of 15±5 fs and 380±90 fs, respectively, and an electron-hole recombination time of 1.5±0.1 ps. Furthermore, excitations of coherent out-of-plane A1g (5.1 THz) and in-plane E1g (3.7 THz) lattice vibrations are visualized through oscillations in the XUV absorption spectra. By comparison to Bethe-Salpeter equation simulations, the spectral changes are mapped to real-space excited-state displacements of the lattice along the dominant A1g coordinate. By directly and simultaneously probing the excited carrier distribution dynamics and accompanying femtosecond lattice displacement in 2H-MoTe2 within a single experiment, our work provides a benchmark for understanding the interplay between electronic and structural dynamics in photoexcited nanomaterials.

No abstract