Site and sample dependent electron–phonon coupling of Eu ions in epitaxial-grown GaN layers

Woodward, Nathaniel; Nishikawa, Atsushi; Fujiwara, Yoshihiro; Dierolf, Volkmar

doi:10.1016/j.optmat.2010.09.029

Cited by 49 publications

(64 citation statements)

References 7 publications

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“…13 Using this source, it was found that either additionally supplied oxygen or a new growth structure was necessary to attain uniform Eu incorporation and luminescence properties comparable to samples grown with the commonly used Eu source, Eu(DPM) 3 . [5][6][7][8][9][10][11][12] Also, when additional oxygen was not supplied, it was found that ∼30% of the Eu ions no longer occupied Ga sites, as is typical in GaN:Eu. 13,14 Several studies have shown that the defect environment in GaN, such as the vacancy and impurities concentrations, can be modified by controlling growth temperature.…”

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confidence: 93%

“…9 However, it has been determined that two of these centers, referred to as OMVPE4 and OMVPE7, are of primary importance. OMVPE4 is referred to as the majority center as it represents ∼85% of the Eu incorporation.…”

mentioning

confidence: 99%

“…Details about this technique can be found elsewhere. 9,18 Resonant excitation gives information on the local environments of the various Eu centers, while indirect excitation gives information on the ability of each Eu center to acquire energy from the GaN host, and is similar to the process by which Eu ions are excited during current injection.…”

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confidence: 99%

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Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment

et al. 2016

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The influence of growth temperature on the surface morphology and luminescence properties of Eu-doped GaN layers grown by organometallic vapor phase epitaxy was investigated. By using a Eu source that does not contain oxygen in its molecular structure, and varying the growth temperature, the local defect environment around the Eu3+ ions was manipulated, yielding a higher emission intensity from the Eu3+ ions and a smoother sample surface. The optimal growth temperature was determined to be 960 °C and was used to fabricate a GaN-based red light-emitting diode with a significantly higher output power.

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confidence: 93%

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Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment

et al. 2016

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“…Indications for Eu clustering in this sample were also reported by Woodward et al based on site selective optical spectroscopy measurements. 17 Finally it is interesting to compare the PL intensity in the best in situ doped ͑S1000͒ and the implanted sample I1450. S1000 shows an integrated PL intensity approximately 20 times stronger than I1450.…”

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confidence: 99%

Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy

Lorenz¹,

Alves²,

Roqan

et al. 2010

Applied Physics Letters

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Eu-doped GaN was grown by organometallic vapor phase epitaxy at temperatures from 900 to 1100 °C. Eu incorporation is influenced by temperature with the highest concentration found for growth at 1000 °C. In all samples, Eu is incorporated entirely on substitutional Ga sites with a slight displacement which is highest (∼0.2 Å) in the sample grown at 900 °C and mainly directed along the c-axis. The major optical Eu3+ centers are identical for in situ doped and ion-implanted samples after high temperature and pressure annealing. The dominant Eu3+ luminescence lines are attributed to isolated, substitutional Eu.

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“…In OMVPE grown GaN:Eu, Eu is known to incorporate into multiple environments, and at least eight distinct optically-active centers have been identified . 19 Each of these centers has a different emission and resonant excitation wavelength, and a distinct lifetime. 20 To avoid simultaneous contributions from various Eu centers, the PL and TR-PL measurements were carried out by resonantly exciting the majority center OMVPE 4 with a dye laser with wavelength 571 nm.…”

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Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity

et al. 2016

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We investigate resonantly excited photoluminescence from a Eu,O-codoped GaN layer embedded into a microcavity, consisting of an AlGaN/GaN distributed Bragg reflector and a Ag reflecting mirror. The microcavity is responsible for a 18.6-fold increase of the Eu emission intensity at ∼10K, and a 21-fold increase at room temperature. We systematically investigate the origin of this enhancement, and we conclude that it is due to the combination of several effects including, the lifetime shortening of the Eu emission, the strain-induced piezoelectric effect, and the increased extraction and excitation field efficiencies. This study paves the way for an alternative method to enhance the photoluminescence intensity in rare-earth doped semiconductor structures.

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Site and sample dependent electron–phonon coupling of Eu ions in epitaxial-grown GaN layers

Cited by 49 publications

References 7 publications

Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment

Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment

Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy

Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity

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