SIPOS Heterojunction contacts to silicon

Kwark, Young; Sinton, Ronald A.; Swanson, R.M.

doi:10.1109/iedm.1984.190832

Cited by 31 publications

(15 citation statements)

References 3 publications

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“…Surprisingly, the heat transfer enhancement is not clearly noted at the same mass flux, which means that the nanofluids with different volume fraction under study is not superior to that of DI water. This result quite coincides with some of previous studies [12][13][14]. However, the trend seems opposite due to the following reasons: there are two possible major mechanisms to involve nanofluid heat transfer during spray cooling.…”

Section: Boiling Curves (Steady State)supporting

confidence: 80%

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Spray cooling characteristics of nanofluids for electronic power devices

Hsieh¹,

Leu²,

Liu³

2016

Nano Online

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which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.The performance of a single spray for electronic power devices using deionized (DI) water and pure silver (Ag) particles as well as multi-walled carbon nanotube (MCNT) particles, respectively, is studied herein. The tests are performed with a flat horizontal heated surface using a nozzle diameter of 0.5 mm with a definite nozzle-to-target surface distance of 25 mm. The effects of nanoparticle volume fraction and mass flow rate of the liquid on the surface heat flux, including critical heat flux (CHF), are explored. Both steady state and transient data are collected for the two-phase heat transfer coefficient, boiling curve/ cooling history, and the corresponding CHF. The heat transfer removal rate can reach up to 274 W/cm2 with the corresponding CHF enhancement ratio of 2.4 for the Ag/water nanofluids present at a volume fraction of 0.0075% with a low mass flux of 11.9 × 10−4 kg/cm2s.

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Section: Boiling Curves (Steady State)supporting

confidence: 80%

“…temperature, etc.) from the previous published papers [12][13][14]), it seems that they may come out different conclusions. Figure 9 displays the h vs. q″ distribution for DI water with different Weber numbers and for nanofluids of Ag and MCNT with different volume fractions.…”

Section: Boiling Curves (Steady State)mentioning

confidence: 86%

Spray cooling characteristics of nanofluids for electronic power devices

Hsieh¹,

Leu²,

Liu³

2016

Nano Online

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“…[57][58][59] The external doping approach A parallel stream of research initiated in the 1980s involved the development of passivating contacts with polycrystalline silicon (poly-Si), 60,61 and semi-insulating polycrystalline silicon (SIPOS) based material systems. 41,62 These inherited strongly from earlier research into microelectronic devices, 63 and were typically composed of a thin SiOx layer sandwiched between the heavily-doped silicon-based outer layer and the c-Si wafer. By the mid-1980s doped poly-Si and SIPOS contacts with thin chemically and thermally grown interfacial SiOx layers were found to provide low J0c and ρc on c-Si, 62,64 to the extent that SIPOS based contacts were the first to demonstrate a Voc above 700 mV -a significant milestone at the time.…”

Section: Mis Passivating Contactsmentioning

confidence: 99%

“…41,62 These inherited strongly from earlier research into microelectronic devices, 63 and were typically composed of a thin SiOx layer sandwiched between the heavily-doped silicon-based outer layer and the c-Si wafer. By the mid-1980s doped poly-Si and SIPOS contacts with thin chemically and thermally grown interfacial SiOx layers were found to provide low J0c and ρc on c-Si, 62,64 to the extent that SIPOS based contacts were the first to demonstrate a Voc above 700 mV -a significant milestone at the time. 41 The physical mechanism that determines the performance of poly-Si based contacts is complicated by in-diffusion of dopant atoms from the poly-Si into the c-Si wafer, which is almost universally reported for such contacts.…”

Section: Mis Passivating Contactsmentioning

confidence: 99%

Passivating contacts for crystalline silicon solar cells

et al. 2019

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The global photovoltaic (PV) market is dominated by crystalline silicon (c-Si) based technologies with heavily doped, directly metallised contacts. Recombination of photogenerated electrons and holes at the contact regions is increasingly constraining the power conversion efficiencies of these devices as other performance-limiting energy losses are overcome. To move forward, c-Si PV technologies must implement alternative contacting approaches. Passivating contacts, which incorporate thin films within the contact structure that simultaneously supress recombination and promote charge carrier selectivity, are a promising next step for the mainstream c-Si PV industry. In this work we review the fundamental physical processes governing contact formation in c-Si. In doing so we identify the role passivating contacts play in increasing c-Si solar cell efficiencies beyond the limitations imposed by heavy doping and direct metallisation. Strategies towards the implementation of passivating contacts in industrial environments are discussed.

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“…This voltage loss can be overcome by inserting passivating buffer layers between the silicon wafer and the metal contact. First approaches, based on thin silicon oxide buffer layers capped with doped poly-silicon or semi-insulating poly-silicon (SIPOS) were pioneered already in the 1980's [3]- [5]. Recently, impressive solar cell results were demonstrated using a similar approach as rear contact [6]- [9], with associated recombination current at the rear side of only 7 fA cm -2 [10].…”

Section: Introductionmentioning

confidence: 99%

Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

Stückelberger

Nogay

Wyss

et al. 2016

Solar Energy Materials and Solar Cells

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We present a novel passivating contact structure based on a nanostructured siliconbased layer. Traditional poly-Si junctions feature excellent junction characteristics but their optical absorption induces current losses when applied to the solar cell front side. Targeting enhanced transparency, the poly-Si layer is replaced with a double-layer stack consisting of a nanostructured silicon oxide capped with a nanocrystalline silicon (nc-Si) layer. The nanostructured silicon oxide layer consists of an amorphous SiOx matrix with incorporated Si filaments connecting one side of the layer to the other, and is referred to as nanocrystalline silicon oxide (nc-SiOx) layer. We investigate passivation quality, measured as saturation current density, and nanostructural changes, characterized by Raman spectroscopy and transmission electron microscopy, carefully studying the influence of annealing dwell temperature. Excellent surface passivation on n-type and also p-type wafers is shown. An optimum annealing temperature of 950 °C is found, resulting in a saturation current density of 8.8 fA cm-2 and 11.0 fA cm-2 for n-type and p-type wafers, respectively. Efficient current extraction is presented with specific contact resistivities of 86 mΩ cm 2 on n-type wafer and 19 mΩ cm 2 on p-type wafers, respectively. Highresolution transmission electron microscopy reveals that the layer stack consists of intermixed SiOx and Si phases with the Si phases being partly crystalline already in the asdeposited state. Thermal annealing at temperatures ≥ 850 °C further promotes crystallization of the Si-rich regions. We show that the addition of the SiOx phase enhances the thermal stability of the contact and we expect it to allow to tune the refractive index and improve transparency while still providing efficient electrical transport thanks to the crystalline Si phase, which extends throughout almost the entire layer.

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SIPOS Heterojunction contacts to silicon

Cited by 31 publications

References 3 publications

Spray cooling characteristics of nanofluids for electronic power devices

Spray cooling characteristics of nanofluids for electronic power devices

Passivating contacts for crystalline silicon solar cells

Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

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