SiO2 surface defect centers studied by AES

Schwidtal, K.

doi:10.1016/0039-6028(78)90138-3

Cited by 43 publications

(5 citation statements)

References 16 publications

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“…Interface traps such as Si dangling bonds at the SiO 2 surface also provide recombination centers. These are similar to the E′ centers , and have acceptor levels between 2 and 4 eV below the conduction band of SiO 2 , with some therefore resonating with the conduction band states and behaving as efficient electron traps (see Figure S5, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

Colossal Ultraviolet Photoresponsivity of Few-Layer Black Phosphorus

Koon

Du³

et al. 2015

ACS Nano

216

183

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Black phosphorus has an orthorhombic layered structure with a layer-dependent direct band gap from monolayer to bulk, making this material an emerging material for photodetection. Inspired by this and the recent excitement over this material, we studied the optoelectronics characteristics of high-quality, few-layer black phosphorus-based photodetectors over a wide spectrum ranging from near-ultraviolet (UV) to near-infrared (NIR). It is demonstrated for the first time that black phosphorus can be configured as an excellent UV photodetector with a specific detectivity ∼3 × 10(13) Jones. More critically, we found that the UV photoresponsivity can be significantly enhanced to ∼9 × 10(4) A W(-1) by applying a source-drain bias (VSD) of 3 V, which is the highest ever measured in any 2D material and 10(7) times higher than the previously reported value for black phosphorus. We attribute such a colossal UV photoresponsivity to the resonant-interband transition between two specially nested valence and conduction bands. These nested bands provide an unusually high density of states for highly efficient UV absorption due to the singularity of their nature.

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Section: Resultsmentioning

confidence: 99%

Colossal Ultraviolet Photoresponsivity of Few-Layer Black Phosphorus

Koon

Du³

et al. 2015

ACS Nano

216

183

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“…In order to extend our interpretation, we applied X-ray photoelectron spectroscopy/X-ray Auger electron spectroscopy (XPS/XAES) to probe the defects303132. A comparative study was conducted using four samples – two as-grown and two 750°C annealed samples of Cu 2 O and Cu 2 O:N, labeled as Cu 2 O, Cu 2 O AN, Cu 2 O:N, and Cu 2 O:N AN, respectively.…”

Section: Discussionmentioning

confidence: 99%

“…As XAES is much more sensitive to the nature of the neighboring bonds and/or point defects than XPS3032, the evolution of Cu LMM Auger lines was measured and Fig. 6 shows typical Cu-related signatures deconvoluted with five different components.…”

Section: Discussionmentioning

confidence: 99%

Probing Defects in Nitrogen-Doped Cu2O

Mei

Liu

et al. 2014

Sci Rep

114

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Nitrogen doping is a promising method of engineering the electronic structure of a metal oxide to modify its optical and electrical properties; however, the doping effect strongly depends on the types of defects introduced. Herein, we report a comparative study of nitrogen-doping-induced defects in Cu2O. Even in the lightly doped samples, a considerable number of nitrogen interstitials (Ni) formed, accompanied by nitrogen substitutions (NO) and oxygen vacancies (VO). In the course of high-temperature annealing, these Ni atoms interacted with VO, resulting in an increase in NO and decreases in Ni and VO. The properties of the annealed sample were significantly modified as a result. Our results suggest that Ni is a significant defect type in nitrogen-doped Cu2O.

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“…Different UV wavelengths can stimulate the generation of positive and negative photoconductivity, simulating excitatory and inhibitory action potentials in synapses, respectively. Additionally, most two-dimensional (2D) materials are constructed on SiO 2 /Si substrates, which possess abundant defect states on their surfaces [106][107][108][109]. Under optical or electrical excitation, these defect states can capture and remove a large number of electrons, thereby adjusting synaptic weight.…”

Section: Defect Engineeringmentioning

confidence: 99%

Low-dimensional optoelectronic synaptic devices for neuromorphic vision sensors

Zhang

et al. 2023

Mater. Futures

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Neuromorphic systems represent a promising avenue for the development of the next generation of artificial intelligence hardware. Machine vision, one of the cores in artificial intelligence, requires system-level support with low power consumption, low latency, and parallel computing. Neuromorphic vision sensors provide an efficient solution for machine vision by simulating the structure and function of the biological retina. Optoelectronic synapses, which use light as the main means to achieve the dual functions of photosensitivity and synapse, are the basic units of the neuromorphic vision sensor. Therefore, it is necessary to develop various optoelectronic synaptic devices to expand the application scenarios of neuromorphic vision systems. This review compares the structure and function for both biological and artificial retina systems, and introduces various optoelectronic synaptic devices based on different materials and working mechanisms. In addition, advanced applications of optoelectronic synapses as neuromorphic vision sensors are comprehensively summarized. Finally, the challenges and prospects in this field are briefly discussed.

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SiO2 surface defect centers studied by AES

Cited by 43 publications

References 16 publications

Colossal Ultraviolet Photoresponsivity of Few-Layer Black Phosphorus

Colossal Ultraviolet Photoresponsivity of Few-Layer Black Phosphorus

Probing Defects in Nitrogen-Doped Cu2O

Low-dimensional optoelectronic synaptic devices for neuromorphic vision sensors

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