Probing Defects in Nitrogen-Doped Cu2O

Abstract

Nitrogen doping is a promising method of engineering the electronic structure of a metal oxide to modify its optical and electrical properties; however, the doping effect strongly depends on the types of defects introduced. Herein, we report a comparative study of nitrogen-doping-induced defects in Cu2O. Even in the lightly doped samples, a considerable number of nitrogen interstitials (Ni) formed, accompanied by nitrogen substitutions (NO) and oxygen vacancies (VO). In the course of high-temperature annealing, these Ni atoms interacted with VO, resulting in an increase in NO and decreases in Ni and VO. The properties of the annealed sample were significantly modified as a result. Our results suggest that Ni is a significant defect type in nitrogen-doped Cu2O.

Dual-functional cubic cuprous oxide for non-enzymatic and oxygen-sensitive photoelectrochemical sensing of glucose

“…Further, the signature of the O 1s peak at 530.4 eV (see Fig. 3(B)) is consistent with O-state in Cu 2 O too [50]. .…”

Hydrogen production from water–gas shift reaction over Ni–Cu–CeO 2 oxide catalyst: The effect of preparation methods

“…3(C) showed that the major contribution was due to the lattice oxygen atoms that are bound to the cerium ions positioned at~529.5 eV [40]. The peak appeared at 530.4 eV may have originated from the oxygen bind with the Cu 2 O [41]. The peaks located to the higher BE at 531.5 and 532.6 eV were attributed to the NiO and defect oxygen, respectively [42].…”

Ultrathin Cu2O as an efficient inorganic hole transporting material for perovskite solar cells

“…We also tried onestep method by spin-coating the mixed solution of PbCl 2 and CH 3 NH 3 I onto ITO/Cu 2 O, but no pure perovskite phase was achieved after annealing at 100 °C, which might be related to the surface properties of Cu 2 O films. [38][39][40] Further optimization of device performance was thus focused on using the two-step method since the residual PbI 2 provides the beneficial effect of passivation.…”